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Title: Substrate-induced disorder in V{sub 2}O{sub 3} thin films grown on annealed c-plane sapphire substrates

Abstract

We investigate the structural and electronic properties of V{sub 2}O{sub 3} thin films deposited by oxygen plasma-assisted molecular beam epitaxy onto annealed and unannealed c-plane sapphire substrates. Annealing the substrates before growth to produce ultra-smooth surfaces improved initial epitaxy, according to in situ reflection high-energy electron diffraction. Surprisingly, films deposited on annealed substrates had a more island-like surface, broader x-ray diffraction peaks, and an increased resistivity of V{sub 2}O{sub 3}'s normally metallic high-temperature phase. We attribute these results to enhanced strain coupling at the interface between the substrate and film, highlighting the vulnerability of V{sub 2}O{sub 3}'s strongly correlated metallic phase to crystalline defects and structural disorder.

Authors:
 [1]; ; ;  [1]
  1. IBM Research Division, Almaden Research Center, San Jose, California 95120 (United States)
Publication Date:
OSTI Identifier:
22089323
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 5; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL DEFECTS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON CORRELATION; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; INTERFACES; LAYERS; METALS; MOLECULAR BEAM EPITAXY; REFLECTION; SAPPHIRE; STRAINS; SUBSTRATES; SURFACES; THIN FILMS; VANADIUM OXIDES; X-RAY DIFFRACTION

Citation Formats

Brockman, J., Department of Applied Physics, Stanford University, Stanford, California 94305, Samant, M. G., Roche, K. P., and Parkin, S. S. P. Substrate-induced disorder in V{sub 2}O{sub 3} thin films grown on annealed c-plane sapphire substrates. United States: N. p., 2012. Web. doi:10.1063/1.4742160.
Brockman, J., Department of Applied Physics, Stanford University, Stanford, California 94305, Samant, M. G., Roche, K. P., & Parkin, S. S. P. Substrate-induced disorder in V{sub 2}O{sub 3} thin films grown on annealed c-plane sapphire substrates. United States. https://doi.org/10.1063/1.4742160
Brockman, J., Department of Applied Physics, Stanford University, Stanford, California 94305, Samant, M. G., Roche, K. P., and Parkin, S. S. P. 2012. "Substrate-induced disorder in V{sub 2}O{sub 3} thin films grown on annealed c-plane sapphire substrates". United States. https://doi.org/10.1063/1.4742160.
@article{osti_22089323,
title = {Substrate-induced disorder in V{sub 2}O{sub 3} thin films grown on annealed c-plane sapphire substrates},
author = {Brockman, J. and Department of Applied Physics, Stanford University, Stanford, California 94305 and Samant, M. G. and Roche, K. P. and Parkin, S. S. P.},
abstractNote = {We investigate the structural and electronic properties of V{sub 2}O{sub 3} thin films deposited by oxygen plasma-assisted molecular beam epitaxy onto annealed and unannealed c-plane sapphire substrates. Annealing the substrates before growth to produce ultra-smooth surfaces improved initial epitaxy, according to in situ reflection high-energy electron diffraction. Surprisingly, films deposited on annealed substrates had a more island-like surface, broader x-ray diffraction peaks, and an increased resistivity of V{sub 2}O{sub 3}'s normally metallic high-temperature phase. We attribute these results to enhanced strain coupling at the interface between the substrate and film, highlighting the vulnerability of V{sub 2}O{sub 3}'s strongly correlated metallic phase to crystalline defects and structural disorder.},
doi = {10.1063/1.4742160},
url = {https://www.osti.gov/biblio/22089323}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 101,
place = {United States},
year = {2012},
month = {7}
}