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Title: Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Abstract

AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using capacitance-frequency-temperature (C-f-T) mapping. Applying sputtering-deposited AlN, we attained AlN/AlGaN/GaN MIS heterostructure field-effect transistors with much suppressed gate leakage currents, but exhibiting frequency dispersion in C-V characteristics owing to high-density AlN/AlGaN interface states. In order to investigate the interface states deteriorating the device performance, we measured temperature-dependent frequency dispersion in the C-V characteristics. As a result, we obtained C-f-T mapping, whose analysis gives the activation energies of electron trapping, namely the interface state energy levels, for a wide range of the gate biases. This analysis method is auxiliary to the conventional conductance method, serving as a valuable tool for characterization of wide-bandgap devices with deep interface states. From the analysis, we can directly evaluate the gate-control efficiency of the devices.

Authors:
; ;  [1]
  1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)
Publication Date:
OSTI Identifier:
22089319
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 4; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALUMINIUM NITRIDES; CAPACITANCE; DENSITY; DEPOSITION; DISPERSIONS; EFFICIENCY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; LEAKAGE CURRENT; PERFORMANCE; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE DEPENDENCE; TRAPPING; TRAPS

Citation Formats

Shih, Hong-An, Kudo, Masahiro, and Suzuki, Toshi-kazu. Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping. United States: N. p., 2012. Web. doi:10.1063/1.4737876.
Shih, Hong-An, Kudo, Masahiro, & Suzuki, Toshi-kazu. Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping. United States. https://doi.org/10.1063/1.4737876
Shih, Hong-An, Kudo, Masahiro, and Suzuki, Toshi-kazu. Mon . "Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping". United States. https://doi.org/10.1063/1.4737876.
@article{osti_22089319,
title = {Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping},
author = {Shih, Hong-An and Kudo, Masahiro and Suzuki, Toshi-kazu},
abstractNote = {AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using capacitance-frequency-temperature (C-f-T) mapping. Applying sputtering-deposited AlN, we attained AlN/AlGaN/GaN MIS heterostructure field-effect transistors with much suppressed gate leakage currents, but exhibiting frequency dispersion in C-V characteristics owing to high-density AlN/AlGaN interface states. In order to investigate the interface states deteriorating the device performance, we measured temperature-dependent frequency dispersion in the C-V characteristics. As a result, we obtained C-f-T mapping, whose analysis gives the activation energies of electron trapping, namely the interface state energy levels, for a wide range of the gate biases. This analysis method is auxiliary to the conventional conductance method, serving as a valuable tool for characterization of wide-bandgap devices with deep interface states. From the analysis, we can directly evaluate the gate-control efficiency of the devices.},
doi = {10.1063/1.4737876},
url = {https://www.osti.gov/biblio/22089319}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 101,
place = {United States},
year = {2012},
month = {7}
}