skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Abstract

We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne{sup ++} for doses between 10{sup 11}-10{sup 13} cm{sup -2}. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the frequency is detuned from the GaAs band edge. As determined from the experimental measurements, the spatial extent of optical modification exceeds the spatial extent of the structural disorder by an order of magnitude.

Authors:
; ; ;  [1];  [1]
  1. Department of Physics and Astronomy, Vanderbilt University, Nashville Tennessee 37205 (United States)
Publication Date:
OSTI Identifier:
22089295
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 1; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMPLITUDES; CROSS SECTIONS; CRYSTAL DEFECTS; DAMAGE; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; ION BEAMS; ION CHANNELING; KEV RANGE 100-1000; NEON IONS; PARTICLE TRACKS; PHONONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SIMULATION; SPECTRA; SPECTROSCOPY

Citation Formats

Steigerwald, A., Hmelo, A. B., Varga, K., Tolk, N., Feldman, L. C., and Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, New Brunswick, New Jersey 08901. Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy. United States: N. p., 2012. Web. doi:10.1063/1.4732072.
Steigerwald, A., Hmelo, A. B., Varga, K., Tolk, N., Feldman, L. C., & Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, New Brunswick, New Jersey 08901. Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy. United States. doi:10.1063/1.4732072.
Steigerwald, A., Hmelo, A. B., Varga, K., Tolk, N., Feldman, L. C., and Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, New Brunswick, New Jersey 08901. Sun . "Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy". United States. doi:10.1063/1.4732072.
@article{osti_22089295,
title = {Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy},
author = {Steigerwald, A. and Hmelo, A. B. and Varga, K. and Tolk, N. and Feldman, L. C. and Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, New Brunswick, New Jersey 08901},
abstractNote = {We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne{sup ++} for doses between 10{sup 11}-10{sup 13} cm{sup -2}. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the frequency is detuned from the GaAs band edge. As determined from the experimental measurements, the spatial extent of optical modification exceeds the spatial extent of the structural disorder by an order of magnitude.},
doi = {10.1063/1.4732072},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 1,
volume = 112,
place = {United States},
year = {2012},
month = {7}
}