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Title: Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis

Abstract

In this study, we present a technique to analyze side wall passivation layers formed on silicon sidewalls after plasma processing. The thickness and chemical composition are derived from angle resolved x-ray photoelectron spectroscopy analyses. It is a non-destructive, quasi in situ method to determine profiles of the thickness and the chemical composition of passivation layers in trenches up to an aspect ratio of about 3. The performance of this technique to quantify the passivation layer thickness is compared to a standard technique using secondary electron microscopy images with respect to two different samples and is found to be at least equivalent. The possible uncertainties and limitations of this technique are discussed as well.

Authors:
; ;  [1]
  1. CNRS/UJF-Grenoble1/CEA LTM, 17 avenue des Martyrs, 38054 Grenoble cedex 9 (France)
Publication Date:
OSTI Identifier:
22089255
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 111; Journal Issue: 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASPECT RATIO; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; ELECTRON MICROSCOPY; LAYERS; NONDESTRUCTIVE TESTING; PERFORMANCE; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; THICKNESS; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Haass, Moritz, Darnon, Maxime, and Joubert, Olivier. Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis. United States: N. p., 2012. Web. doi:10.1063/1.4729775.
Haass, Moritz, Darnon, Maxime, & Joubert, Olivier. Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis. United States. doi:10.1063/1.4729775.
Haass, Moritz, Darnon, Maxime, and Joubert, Olivier. Fri . "Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis". United States. doi:10.1063/1.4729775.
@article{osti_22089255,
title = {Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis},
author = {Haass, Moritz and Darnon, Maxime and Joubert, Olivier},
abstractNote = {In this study, we present a technique to analyze side wall passivation layers formed on silicon sidewalls after plasma processing. The thickness and chemical composition are derived from angle resolved x-ray photoelectron spectroscopy analyses. It is a non-destructive, quasi in situ method to determine profiles of the thickness and the chemical composition of passivation layers in trenches up to an aspect ratio of about 3. The performance of this technique to quantify the passivation layer thickness is compared to a standard technique using secondary electron microscopy images with respect to two different samples and is found to be at least equivalent. The possible uncertainties and limitations of this technique are discussed as well.},
doi = {10.1063/1.4729775},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 111,
place = {United States},
year = {2012},
month = {6}
}