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Title: Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer

Abstract

We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer help to improve the adhesion of nanodiamond seeds on the tungsten surface. The seeding density on tungsten coated silicon thus increases. Tungsten carbide is formed by reactions of the tungsten layer with carbon containing plasma species. It provides favorable (001) crystal planes for the nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the density of diamond seeds/nuclei. UNCD films grown at different gas pressures on tungsten coated silicon which is pre-seeded by nanodiamond along with heteroepitaxially nucleated diamond nuclei were characterized by Raman scattering, field emission-scanning electron microscopy, and high resolution-transmission electron microscopy.

Authors:
;  [1];  [2];  [3];  [2]; ;  [4];  [5];  [1];  [3];  [6]
  1. Institute of Microelectronics, No.1, University Road, Tainan 701, Taiwan (China)
  2. Institute of Nanotechnology and Microsystems Engineering, No.1, University Road, Tainan 701, Taiwan (China)
  3. (China)
  4. Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Road, Tainan 701, Taiwan (China)
  5. Industrial Technology Research Institute - South, Tainan 701, Taiwan (China)
  6. Argonne National Laboratory, Materials Science Division, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)
Publication Date:
OSTI Identifier:
22089254
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 111; Journal Issue: 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON; CHEMICAL VAPOR DEPOSITION; CRYSTALS; FIELD EMISSION; LAYERS; METHANE; MICROWAVE RADIATION; NANOSTRUCTURES; NUCLEATION; RAMAN EFFECT; RAMAN SPECTRA; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN

Citation Formats

Chu, Yueh-Chieh, Jiang, Gerald, Tu, Chia-Hao, Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Road, Tainan 701, Taiwan, Chang Chi, Liu, Chuan-pu, Ting, Jyh-Ming, Lee, Hsin-Li, Tzeng, Yonhua, Advanced Optoelectronics Technology Center, No.1, University Road, Tainan 701, Taiwan, and Auciello, Orlando. Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer. United States: N. p., 2012. Web. doi:10.1063/1.4729798.
Chu, Yueh-Chieh, Jiang, Gerald, Tu, Chia-Hao, Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Road, Tainan 701, Taiwan, Chang Chi, Liu, Chuan-pu, Ting, Jyh-Ming, Lee, Hsin-Li, Tzeng, Yonhua, Advanced Optoelectronics Technology Center, No.1, University Road, Tainan 701, Taiwan, & Auciello, Orlando. Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer. United States. doi:10.1063/1.4729798.
Chu, Yueh-Chieh, Jiang, Gerald, Tu, Chia-Hao, Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Road, Tainan 701, Taiwan, Chang Chi, Liu, Chuan-pu, Ting, Jyh-Ming, Lee, Hsin-Li, Tzeng, Yonhua, Advanced Optoelectronics Technology Center, No.1, University Road, Tainan 701, Taiwan, and Auciello, Orlando. Fri . "Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer". United States. doi:10.1063/1.4729798.
@article{osti_22089254,
title = {Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer},
author = {Chu, Yueh-Chieh and Jiang, Gerald and Tu, Chia-Hao and Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Road, Tainan 701, Taiwan and Chang Chi and Liu, Chuan-pu and Ting, Jyh-Ming and Lee, Hsin-Li and Tzeng, Yonhua and Advanced Optoelectronics Technology Center, No.1, University Road, Tainan 701, Taiwan and Auciello, Orlando},
abstractNote = {We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer help to improve the adhesion of nanodiamond seeds on the tungsten surface. The seeding density on tungsten coated silicon thus increases. Tungsten carbide is formed by reactions of the tungsten layer with carbon containing plasma species. It provides favorable (001) crystal planes for the nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the density of diamond seeds/nuclei. UNCD films grown at different gas pressures on tungsten coated silicon which is pre-seeded by nanodiamond along with heteroepitaxially nucleated diamond nuclei were characterized by Raman scattering, field emission-scanning electron microscopy, and high resolution-transmission electron microscopy.},
doi = {10.1063/1.4729798},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 111,
place = {United States},
year = {2012},
month = {6}
}