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Title: Visible light emission and energy transfer processes in Sm-doped nitride films

Abstract

Even though the great interest in studying the near-infrared light emission due to Er{sup 3+} ions for telecommunication purposes, efficient visible radiation can be achieved from many different rare-earth (RE) ions. In fact, visible and/or near-infrared light emission takes place in RE-doped wide bandgap semiconductors following either photon or electron excitation, suggesting their technological potential in devices such as light-emitting diodes (LED's) and flat-panel displays, for example. Taking into consideration these aspects, the present contribution reports on the investigation of AlN, BeN, GeN, and SiN thin films doped with samarium. The samples were prepared by sputtering and as a result of the deposition method and conditions they present an amorphous structure and Sm concentrations in the low 0.5 at. %. After deposition, the samples were submitted to thermal annealing treatments and investigated by different spectroscopic techniques. A detailed examination of the experimental data allowed to identify optical transitions due to Sm{sup 3+} and Sm{sup 2+} ions as well as differences in their mechanisms of photon excitation and recombination. Moreover, it is shown that the Sm-related spectral features and emission intensity are susceptible, respectively, to the atomic environment the Sm{sup 3+}/Sm{sup 2+} ions experience and to the presence of non-radiative recombinationmore » centers.« less

Authors:
 [1]
  1. Instituto de Fisica de Sao Carlos - USP, Sao Carlos 13560-250 - SP (Brazil)
Publication Date:
OSTI Identifier:
22089240
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 111; Journal Issue: 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ANNEALING; BERYLLIUM COMPOUNDS; DEPOSITION; DOPED MATERIALS; ENERGY TRANSFER; ERBIUM ADDITIONS; EXCITATION; GERMANIUM COMPOUNDS; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; RECOMBINATION; RHENIUM ADDITIONS; SAMARIUM ADDITIONS; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SPUTTERING; THIN FILMS; VISIBLE RADIATION

Citation Formats

Zanatta, A. R. Visible light emission and energy transfer processes in Sm-doped nitride films. United States: N. p., 2012. Web. doi:10.1063/1.4729911.
Zanatta, A. R. Visible light emission and energy transfer processes in Sm-doped nitride films. United States. doi:10.1063/1.4729911.
Zanatta, A. R. Fri . "Visible light emission and energy transfer processes in Sm-doped nitride films". United States. doi:10.1063/1.4729911.
@article{osti_22089240,
title = {Visible light emission and energy transfer processes in Sm-doped nitride films},
author = {Zanatta, A. R.},
abstractNote = {Even though the great interest in studying the near-infrared light emission due to Er{sup 3+} ions for telecommunication purposes, efficient visible radiation can be achieved from many different rare-earth (RE) ions. In fact, visible and/or near-infrared light emission takes place in RE-doped wide bandgap semiconductors following either photon or electron excitation, suggesting their technological potential in devices such as light-emitting diodes (LED's) and flat-panel displays, for example. Taking into consideration these aspects, the present contribution reports on the investigation of AlN, BeN, GeN, and SiN thin films doped with samarium. The samples were prepared by sputtering and as a result of the deposition method and conditions they present an amorphous structure and Sm concentrations in the low 0.5 at. %. After deposition, the samples were submitted to thermal annealing treatments and investigated by different spectroscopic techniques. A detailed examination of the experimental data allowed to identify optical transitions due to Sm{sup 3+} and Sm{sup 2+} ions as well as differences in their mechanisms of photon excitation and recombination. Moreover, it is shown that the Sm-related spectral features and emission intensity are susceptible, respectively, to the atomic environment the Sm{sup 3+}/Sm{sup 2+} ions experience and to the presence of non-radiative recombination centers.},
doi = {10.1063/1.4729911},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 111,
place = {United States},
year = {2012},
month = {6}
}