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Title: Radiation protection for high energy implantation of light ions in a production environment

Abstract

In recent years the irradiation of semiconductor devices by light ions with high energies has increasingly become a well-established method to adjust charge carrier lifetimes in semiconductor devices. To introduce this process into the end of frontend production environment several measures in terms of radiation safety will have to be obeyed. An overview on thresholds for particles induced gamma emission will be given, starting with the {sup 11}B(p,{gamma}){sup 12}C reaction at 163keV. The environment has to be shielded from gamma rays, therefore those implanters have to be situated in adequate enclosures. Calculations for specific implant energies are done to define the thicknesses of tool enclosures. A set of radiation detectors monitors the values at well-defined positions online and radiation values are fed into a superordinate system that is directly coupled to the main power supply of the implanter.

Authors:
; ;  [1];  [2]
  1. Infineon Technologies Austria AG, Villach, Siemensstr. 2 (Austria)
  2. (Germany)
Publication Date:
OSTI Identifier:
22086203
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
61 RADIATION PROTECTION AND DOSIMETRY; 36 MATERIALS SCIENCE; BORON 11 TARGET; CARBON 12; CARRIER LIFETIME; CHARGE CARRIERS; GAMMA DETECTION; GAMMA RADIATION; IMPLANTS; ION IMPLANTATION; IRRADIATION; LIGHT IONS; PHOTON EMISSION; PROTON REACTIONS; RADIATION DETECTORS; RADIATION PROTECTION; SEMICONDUCTOR DEVICES

Citation Formats

Kroener, Friedrich, Schustereder, Werner, Fuchs, Dieter, and Infineon Technologies AG, Regensburg, Wernerwerkstr. 2. Radiation protection for high energy implantation of light ions in a production environment. United States: N. p., 2012. Web. doi:10.1063/1.4766573.
Kroener, Friedrich, Schustereder, Werner, Fuchs, Dieter, & Infineon Technologies AG, Regensburg, Wernerwerkstr. 2. Radiation protection for high energy implantation of light ions in a production environment. United States. doi:10.1063/1.4766573.
Kroener, Friedrich, Schustereder, Werner, Fuchs, Dieter, and Infineon Technologies AG, Regensburg, Wernerwerkstr. 2. Tue . "Radiation protection for high energy implantation of light ions in a production environment". United States. doi:10.1063/1.4766573.
@article{osti_22086203,
title = {Radiation protection for high energy implantation of light ions in a production environment},
author = {Kroener, Friedrich and Schustereder, Werner and Fuchs, Dieter and Infineon Technologies AG, Regensburg, Wernerwerkstr. 2},
abstractNote = {In recent years the irradiation of semiconductor devices by light ions with high energies has increasingly become a well-established method to adjust charge carrier lifetimes in semiconductor devices. To introduce this process into the end of frontend production environment several measures in terms of radiation safety will have to be obeyed. An overview on thresholds for particles induced gamma emission will be given, starting with the {sup 11}B(p,{gamma}){sup 12}C reaction at 163keV. The environment has to be shielded from gamma rays, therefore those implanters have to be situated in adequate enclosures. Calculations for specific implant energies are done to define the thicknesses of tool enclosures. A set of radiation detectors monitors the values at well-defined positions online and radiation values are fed into a superordinate system that is directly coupled to the main power supply of the implanter.},
doi = {10.1063/1.4766573},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}