An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum
- Institute of Physical Engineering, Brno University of Technology, Technicka 2, 616 69 Brno (Czech Republic)
The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values ({approx_equal}10{sup 1} eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10{sup 1} eV and 10{sup 1} nA/cm{sup 2}, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions.
- OSTI ID:
- 22085908
- Journal Information:
- Review of Scientific Instruments, Vol. 82, Issue 8; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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