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Title: Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As

Abstract

We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow an n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps to understand the mechanism of carrier-mediated ferromagnetism in FMSs.

Authors:
;  [1]; ;  [2];  [3];  [4];  [3];  [5];  [1];  [5]
  1. Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  2. Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  3. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047 (Japan)
  4. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
  5. (Japan)
Publication Date:
OSTI Identifier:
22080512
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 18; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BERYLLIUM ADDITIONS; DOPED MATERIALS; ELECTRONS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FIELD EFFECT TRANSISTORS; IMPURITIES; INDIUM ARSENIDES; IRON ADDITIONS; LAYERS; LIGHT EMITTING DIODES; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; SPIN

Citation Formats

Hai, Pham Nam, Anh, Le Duc, Mohan, Shyam, Tamegai, Tsuyoshi, Kodzuka, Masaya, Ohkubo, Tadakatsu, Hono, Kazuhiro, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Tanaka, Masaaki, and Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama 332-0012. Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As. United States: N. p., 2012. Web. doi:10.1063/1.4764947.
Hai, Pham Nam, Anh, Le Duc, Mohan, Shyam, Tamegai, Tsuyoshi, Kodzuka, Masaya, Ohkubo, Tadakatsu, Hono, Kazuhiro, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Tanaka, Masaaki, & Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama 332-0012. Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As. United States. doi:10.1063/1.4764947.
Hai, Pham Nam, Anh, Le Duc, Mohan, Shyam, Tamegai, Tsuyoshi, Kodzuka, Masaya, Ohkubo, Tadakatsu, Hono, Kazuhiro, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Tanaka, Masaaki, and Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama 332-0012. Mon . "Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As". United States. doi:10.1063/1.4764947.
@article{osti_22080512,
title = {Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As},
author = {Hai, Pham Nam and Anh, Le Duc and Mohan, Shyam and Tamegai, Tsuyoshi and Kodzuka, Masaya and Ohkubo, Tadakatsu and Hono, Kazuhiro and National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 and Tanaka, Masaaki and Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama 332-0012},
abstractNote = {We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow an n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps to understand the mechanism of carrier-mediated ferromagnetism in FMSs.},
doi = {10.1063/1.4764947},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}