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Title: Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

Abstract

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Authors:
;  [1];  [2]; ; ; ; ; ; ; ;  [3];  [4];  [5]
  1. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  2. (United States)
  3. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  4. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States)
  5. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)
Publication Date:
OSTI Identifier:
22080510
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 18; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; ASYMMETRY; BISMUTH COMPOUNDS; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Fan Dongsheng, Yu Shuiqing, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, Zeng Zhaoquan, Hu Xian, Dorogan, Vitaliy G., Li Chen, Benamara, Mourad, Hawkridge, Michael E., Mazur, Yuriy I., Salamo, Gregory J., Johnson, Shane R., and Wang, Zhiming M. Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures. United States: N. p., 2012. Web. doi:10.1063/1.4764556.
Fan Dongsheng, Yu Shuiqing, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, Zeng Zhaoquan, Hu Xian, Dorogan, Vitaliy G., Li Chen, Benamara, Mourad, Hawkridge, Michael E., Mazur, Yuriy I., Salamo, Gregory J., Johnson, Shane R., & Wang, Zhiming M. Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures. United States. doi:10.1063/1.4764556.
Fan Dongsheng, Yu Shuiqing, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, Zeng Zhaoquan, Hu Xian, Dorogan, Vitaliy G., Li Chen, Benamara, Mourad, Hawkridge, Michael E., Mazur, Yuriy I., Salamo, Gregory J., Johnson, Shane R., and Wang, Zhiming M. Mon . "Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures". United States. doi:10.1063/1.4764556.
@article{osti_22080510,
title = {Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures},
author = {Fan Dongsheng and Yu Shuiqing and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 and Zeng Zhaoquan and Hu Xian and Dorogan, Vitaliy G. and Li Chen and Benamara, Mourad and Hawkridge, Michael E. and Mazur, Yuriy I. and Salamo, Gregory J. and Johnson, Shane R. and Wang, Zhiming M.},
abstractNote = {GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.},
doi = {10.1063/1.4764556},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}