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Title: Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

Abstract

We used hard x-ray photoelectron spectroscopy to investigate the interfacial electronic states of a poly(styrenesulfonate) doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) contact on a ZnO single crystal. An understanding of the interfacial band structure is useful for putting the organic contact to practical use. We observed upward band bending of the ZnO layer a few nanometers from the interface. The detected ZnO bulk region exhibited a flat band structure, meaning that the PEDOT:PSS does not greatly deplete the ZnO layer. The band bending caused the charge injection barrier formation with the result that the contact exhibited the Schottky property.

Authors:
; ;  [1]; ;  [1];  [2];  [1];  [2]; ;  [3]
  1. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
  2. (Japan)
  3. NIMS Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)
Publication Date:
OSTI Identifier:
22080509
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BENDING; DOPED MATERIALS; HARD X RADIATION; INJECTION; INTERFACES; LAYERS; MONOCRYSTALS; ORGANIC COMPOUNDS; SEMICONDUCTOR MATERIALS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES

Citation Formats

Nagata, T., Hayakawa, R., Chikyow, T., Oh, S., Wakayama, Y., Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba 305-0044, Yamashita, Y., NIMS Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Yoshikawa, H., and Kobayashi, K. Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface. United States: N. p., 2012. Web. doi:10.1063/1.4762834.
Nagata, T., Hayakawa, R., Chikyow, T., Oh, S., Wakayama, Y., Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba 305-0044, Yamashita, Y., NIMS Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Yoshikawa, H., & Kobayashi, K. Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface. United States. doi:10.1063/1.4762834.
Nagata, T., Hayakawa, R., Chikyow, T., Oh, S., Wakayama, Y., Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba 305-0044, Yamashita, Y., NIMS Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Yoshikawa, H., and Kobayashi, K. Mon . "Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface". United States. doi:10.1063/1.4762834.
@article{osti_22080509,
title = {Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface},
author = {Nagata, T. and Hayakawa, R. and Chikyow, T. and Oh, S. and Wakayama, Y. and Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba 305-0044 and Yamashita, Y. and NIMS Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148 and Yoshikawa, H. and Kobayashi, K.},
abstractNote = {We used hard x-ray photoelectron spectroscopy to investigate the interfacial electronic states of a poly(styrenesulfonate) doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) contact on a ZnO single crystal. An understanding of the interfacial band structure is useful for putting the organic contact to practical use. We observed upward band bending of the ZnO layer a few nanometers from the interface. The detected ZnO bulk region exhibited a flat band structure, meaning that the PEDOT:PSS does not greatly deplete the ZnO layer. The band bending caused the charge injection barrier formation with the result that the contact exhibited the Schottky property.},
doi = {10.1063/1.4762834},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}