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Title: Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation

Abstract

Phase transformation of amorphous-silicon during millisecond annealing using micro-thermal-plasma-jet irradiation was directly observed using a high-speed camera with microsecond time resolution. An oval-shaped molten-silicon region adjacent to the solid phase crystallization region was clearly observed, followed by lateral large grain growth perpendicular to a liquid-solid interface. Furthermore, leading wave crystallization (LWC), which showed intermittent explosive crystallization, was discovered in front of the moving molten region. The growth mechanism of LWC has been investigated on the basis of numerical simulation implementing explosive movement of a thin liquid layer driven by released latent heat diffusion in a lateral direction.

Authors:
; ; ; ; ; ; ;  [1]
  1. Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530 (Japan)
Publication Date:
OSTI Identifier:
22080508
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; COMPUTERIZED SIMULATION; CRYSTALLIZATION; GRAIN GROWTH; IMAGES; INTERFACES; LAYERS; LIQUIDS; NUMERICAL ANALYSIS; PHYSICAL RADIATION EFFECTS; PLASMA JETS; SEMICONDUCTOR MATERIALS; SILICON; SOLIDS; TIME RESOLUTION

Citation Formats

Hayashi, Shohei, Fujita, Yuji, Kamikura, Takahiro, Sakaike, Kohei, Akazawa, Muneki, Ikeda, Mitsuhisa, Hanafusa, Hiroaki, and Higashi, Seiichiro. Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation. United States: N. p., 2012. Web. doi:10.1063/1.4764522.
Hayashi, Shohei, Fujita, Yuji, Kamikura, Takahiro, Sakaike, Kohei, Akazawa, Muneki, Ikeda, Mitsuhisa, Hanafusa, Hiroaki, & Higashi, Seiichiro. Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation. United States. doi:10.1063/1.4764522.
Hayashi, Shohei, Fujita, Yuji, Kamikura, Takahiro, Sakaike, Kohei, Akazawa, Muneki, Ikeda, Mitsuhisa, Hanafusa, Hiroaki, and Higashi, Seiichiro. Mon . "Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation". United States. doi:10.1063/1.4764522.
@article{osti_22080508,
title = {Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation},
author = {Hayashi, Shohei and Fujita, Yuji and Kamikura, Takahiro and Sakaike, Kohei and Akazawa, Muneki and Ikeda, Mitsuhisa and Hanafusa, Hiroaki and Higashi, Seiichiro},
abstractNote = {Phase transformation of amorphous-silicon during millisecond annealing using micro-thermal-plasma-jet irradiation was directly observed using a high-speed camera with microsecond time resolution. An oval-shaped molten-silicon region adjacent to the solid phase crystallization region was clearly observed, followed by lateral large grain growth perpendicular to a liquid-solid interface. Furthermore, leading wave crystallization (LWC), which showed intermittent explosive crystallization, was discovered in front of the moving molten region. The growth mechanism of LWC has been investigated on the basis of numerical simulation implementing explosive movement of a thin liquid layer driven by released latent heat diffusion in a lateral direction.},
doi = {10.1063/1.4764522},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}