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Title: Anomalous transport of Sb in laser irradiated Ge

Abstract

Excimer laser annealing is shown to be very promising to promote Sb incorporation in Ge up to concentrations as high as 1 Multiplication-Sign 10{sup 21} at./cm{sup 3}. However, we demonstrate that when Ge is melted by laser irradiation, a high excess of vacancies is generated in the molten region. These vacancies induce Sb electrical deactivation at the melt depth through the formation of Sb{sub m}-V{sub n} complexes that act as a sink for further Sb atoms, even leading Sb to back-diffuse towards the surface, against the concentration gradient. These results are fundamental for the realization of new generation Ge-based micro and optoelectronic devices.

Authors:
; ; ; ;  [1];  [2]; ;  [3];  [4]
  1. MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, 95123 Catania (Italy)
  2. CNR-IMM, Zona Industriale VIII strada 5, 95121 Catania (Italy)
  3. CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy)
  4. MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)
Publication Date:
OSTI Identifier:
22080507
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ANTIMONY; ATOMS; CRYSTALS; DEACTIVATION; DIFFUSION; EXCIMER LASERS; GERMANIUM; LASER RADIATION; SEMICONDUCTOR MATERIALS; VACANCIES

Citation Formats

Bruno, E., Scapellato, G. G., Boninelli, S., Priolo, F., Privitera, V., La Magna, A., Cuscuna, M., Fortunato, G., and Napolitani, E. Anomalous transport of Sb in laser irradiated Ge. United States: N. p., 2012. Web. doi:10.1063/1.4764069.
Bruno, E., Scapellato, G. G., Boninelli, S., Priolo, F., Privitera, V., La Magna, A., Cuscuna, M., Fortunato, G., & Napolitani, E. Anomalous transport of Sb in laser irradiated Ge. United States. doi:10.1063/1.4764069.
Bruno, E., Scapellato, G. G., Boninelli, S., Priolo, F., Privitera, V., La Magna, A., Cuscuna, M., Fortunato, G., and Napolitani, E. Mon . "Anomalous transport of Sb in laser irradiated Ge". United States. doi:10.1063/1.4764069.
@article{osti_22080507,
title = {Anomalous transport of Sb in laser irradiated Ge},
author = {Bruno, E. and Scapellato, G. G. and Boninelli, S. and Priolo, F. and Privitera, V. and La Magna, A. and Cuscuna, M. and Fortunato, G. and Napolitani, E.},
abstractNote = {Excimer laser annealing is shown to be very promising to promote Sb incorporation in Ge up to concentrations as high as 1 Multiplication-Sign 10{sup 21} at./cm{sup 3}. However, we demonstrate that when Ge is melted by laser irradiation, a high excess of vacancies is generated in the molten region. These vacancies induce Sb electrical deactivation at the melt depth through the formation of Sb{sub m}-V{sub n} complexes that act as a sink for further Sb atoms, even leading Sb to back-diffuse towards the surface, against the concentration gradient. These results are fundamental for the realization of new generation Ge-based micro and optoelectronic devices.},
doi = {10.1063/1.4764069},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}