Anomalous transport of Sb in laser irradiated Ge
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, 95123 Catania (Italy)
- CNR-IMM, Zona Industriale VIII strada 5, 95121 Catania (Italy)
- CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy)
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)
Excimer laser annealing is shown to be very promising to promote Sb incorporation in Ge up to concentrations as high as 1 Multiplication-Sign 10{sup 21} at./cm{sup 3}. However, we demonstrate that when Ge is melted by laser irradiation, a high excess of vacancies is generated in the molten region. These vacancies induce Sb electrical deactivation at the melt depth through the formation of Sb{sub m}-V{sub n} complexes that act as a sink for further Sb atoms, even leading Sb to back-diffuse towards the surface, against the concentration gradient. These results are fundamental for the realization of new generation Ge-based micro and optoelectronic devices.
- OSTI ID:
- 22080507
- Journal Information:
- Applied Physics Letters, Vol. 101, Issue 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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