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Title: Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates

Abstract

We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.

Authors:
; ; ; ; ; ; ;  [1]; ;  [2]
  1. Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
  2. Dipartimento di Scienza dei Materiali and L-NESS, Universita di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy)
Publication Date:
OSTI Identifier:
22080505
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTRA; ALUMINIUM ARSENIDES; EXCITONS; GALLIUM ARSENIDES; IMPURITIES; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; PHOTON EMISSION; PHOTONS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; TIME RESOLUTION

Citation Formats

Minari, S., Cavigli, L., Sarti, F., Abbarchi, M., Accanto, N., Munoz Matutano, G., Vinattieri, A., Gurioli, M., Bietti, S., and Sanguinetti, S. Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates. United States: N. p., 2012. Web. doi:10.1063/1.4761939.
Minari, S., Cavigli, L., Sarti, F., Abbarchi, M., Accanto, N., Munoz Matutano, G., Vinattieri, A., Gurioli, M., Bietti, S., & Sanguinetti, S. Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates. United States. doi:10.1063/1.4761939.
Minari, S., Cavigli, L., Sarti, F., Abbarchi, M., Accanto, N., Munoz Matutano, G., Vinattieri, A., Gurioli, M., Bietti, S., and Sanguinetti, S. Mon . "Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates". United States. doi:10.1063/1.4761939.
@article{osti_22080505,
title = {Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates},
author = {Minari, S. and Cavigli, L. and Sarti, F. and Abbarchi, M. and Accanto, N. and Munoz Matutano, G. and Vinattieri, A. and Gurioli, M. and Bietti, S. and Sanguinetti, S.},
abstractNote = {We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.},
doi = {10.1063/1.4761939},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}