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Title: Growth of wurtzite InN on bulk In{sub 2}O{sub 3}(111) wafers

Abstract

A single phase InN epitaxial film is grown on a bulk In{sub 2}O{sub 3}(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In{sub 2}O{sub 3} orientation relationship is found to be (0001) parallel (111) and [1100] parallel [112]. High quality of the layer is confirmed by the small widths of the x-ray rocking curves, the sharp interfaces revealed by transmission electron microscopy, the narrow spectral width of the Raman E{sub 2}{sup h} vibrational mode, and the position of the photoluminescence band close to the fundamental band gap of InN.

Authors:
; ; ; ; ;  [1];  [2]; ; ; ; ;  [3]
  1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
  2. Center for Computational Materials Science, Naval Research Laboratory, Washington, D.C. 20375 (United States)
  3. Leibniz-Institut fuer Kristallzuechtung, Max-Born-Str. 2, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22080503
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ENERGY GAP; FILMS; INDIUM NITRIDES; INDIUM OXIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Sadofev, Sergey, Cho, Yong Jin, Brandt, Oliver, Ramsteiner, Manfred, Calarco, Raffaella, Riechert, Henning, Erwin, Steven C., Galazka, Zbigniew, Korytov, Maxym, Albrecht, Martin, Uecker, Reinhard, and Fornari, Roberto. Growth of wurtzite InN on bulk In{sub 2}O{sub 3}(111) wafers. United States: N. p., 2012. Web. doi:10.1063/1.4761985.
Sadofev, Sergey, Cho, Yong Jin, Brandt, Oliver, Ramsteiner, Manfred, Calarco, Raffaella, Riechert, Henning, Erwin, Steven C., Galazka, Zbigniew, Korytov, Maxym, Albrecht, Martin, Uecker, Reinhard, & Fornari, Roberto. Growth of wurtzite InN on bulk In{sub 2}O{sub 3}(111) wafers. United States. doi:10.1063/1.4761985.
Sadofev, Sergey, Cho, Yong Jin, Brandt, Oliver, Ramsteiner, Manfred, Calarco, Raffaella, Riechert, Henning, Erwin, Steven C., Galazka, Zbigniew, Korytov, Maxym, Albrecht, Martin, Uecker, Reinhard, and Fornari, Roberto. Mon . "Growth of wurtzite InN on bulk In{sub 2}O{sub 3}(111) wafers". United States. doi:10.1063/1.4761985.
@article{osti_22080503,
title = {Growth of wurtzite InN on bulk In{sub 2}O{sub 3}(111) wafers},
author = {Sadofev, Sergey and Cho, Yong Jin and Brandt, Oliver and Ramsteiner, Manfred and Calarco, Raffaella and Riechert, Henning and Erwin, Steven C. and Galazka, Zbigniew and Korytov, Maxym and Albrecht, Martin and Uecker, Reinhard and Fornari, Roberto},
abstractNote = {A single phase InN epitaxial film is grown on a bulk In{sub 2}O{sub 3}(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In{sub 2}O{sub 3} orientation relationship is found to be (0001) parallel (111) and [1100] parallel [112]. High quality of the layer is confirmed by the small widths of the x-ray rocking curves, the sharp interfaces revealed by transmission electron microscopy, the narrow spectral width of the Raman E{sub 2}{sup h} vibrational mode, and the position of the photoluminescence band close to the fundamental band gap of InN.},
doi = {10.1063/1.4761985},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}