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Title: Fe-doped InN layers grown by molecular beam epitaxy

Abstract

Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN.

Authors:
; ; ; ; ; ; ;  [1]; ; ;  [2]; ;  [3];  [4];  [5]
  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
  2. State Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)
  3. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology (Hong Kong)
  4. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01314 Dresden (Germany)
  5. Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)
Publication Date:
OSTI Identifier:
22080502
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DENSITY; DOPED MATERIALS; ELECTRON DENSITY; ELECTRON MOBILITY; GALLIUM NITRIDES; IMPURITIES; INDIUM NITRIDES; IRON ADDITIONS; LAYERS; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; QUENCHING; REDUCTION; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SURFACES

Citation Formats

Wang Xinqiang, Liu Shitao, Ma Dingyu, Zheng Xiantong, Chen Guang, Xu Fujun, Tang Ning, Shen Bo, Zhang Peng, Cao Xingzhong, Wang Baoyi, Huang Sen, Chen, Kevin J., Zhou Shengqiang, and Yoshikawa, Akihiko. Fe-doped InN layers grown by molecular beam epitaxy. United States: N. p., 2012. Web. doi:10.1063/1.4764013.
Wang Xinqiang, Liu Shitao, Ma Dingyu, Zheng Xiantong, Chen Guang, Xu Fujun, Tang Ning, Shen Bo, Zhang Peng, Cao Xingzhong, Wang Baoyi, Huang Sen, Chen, Kevin J., Zhou Shengqiang, & Yoshikawa, Akihiko. Fe-doped InN layers grown by molecular beam epitaxy. United States. doi:10.1063/1.4764013.
Wang Xinqiang, Liu Shitao, Ma Dingyu, Zheng Xiantong, Chen Guang, Xu Fujun, Tang Ning, Shen Bo, Zhang Peng, Cao Xingzhong, Wang Baoyi, Huang Sen, Chen, Kevin J., Zhou Shengqiang, and Yoshikawa, Akihiko. Mon . "Fe-doped InN layers grown by molecular beam epitaxy". United States. doi:10.1063/1.4764013.
@article{osti_22080502,
title = {Fe-doped InN layers grown by molecular beam epitaxy},
author = {Wang Xinqiang and Liu Shitao and Ma Dingyu and Zheng Xiantong and Chen Guang and Xu Fujun and Tang Ning and Shen Bo and Zhang Peng and Cao Xingzhong and Wang Baoyi and Huang Sen and Chen, Kevin J. and Zhou Shengqiang and Yoshikawa, Akihiko},
abstractNote = {Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN.},
doi = {10.1063/1.4764013},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}