Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth

Journal Article · Mon Sep 10 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4752233· OSTI ID:22080437

Kaizu, Toshiyuki; Okada, Yoshitaka ^[1]; Tamura, Yosuke; Igarashi, Makoto; Hu, Weiguo; Tsukamoto, Rikako ^[2]; Yamashita, Ichiro ^[2]; Samukawa, Seiji ^[2]

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1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan)
2. Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

We have fabricated GaAs nanodisk (ND) structures by using a combination of neutral beam etching process and atomic hydrogen-assisted molecular beam epitaxy regrowth. We have observed clear photoluminescence (PL) emissions from GaAs NDs. The peak energy showed a blueshift due to the quantum confinement in three spatial dimensions, and it agreed with the theoretically estimated transition energy. The PL results also showed that the cap-layer disks act as radiative recombination centers. We have confirmed that the PL emission originates from the GaAs NDs, and our approach is effective for the fabrication of high quality ND structures.

• OSTI ID: 22080437
• Journal Information: Applied Physics Letters, Vol. 101, Issue 11; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
BEAMS
CONFINEMENT
ETCHING
GALLIUM ARSENIDES
HYDROGEN
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT