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Title: Electronic structure of graphene oxide and reduced graphene oxide monolayers

Abstract

Graphene oxide (GO) monolayers obtained by Langmuir Blodgett route and suitably treated to obtain reduced graphene oxide (RGO) monolayers were studied by photoelectron spectroscopy. Upon reduction of GO to form RGO C1s x-ray photoelectron spectra showed increase in graphitic carbon content, while ultraviolet photoelectron spectra showed increase in intensity corresponding to C2p-{pi} electrons ({approx}3.5 eV). X-ray excited Auger transitions C(KVV) and plasmon energy loss of C1s photoelectrons have been analyzed to elucidate the valence band structure. The effective number of ({pi}+{sigma}) electrons as obtained from energy loss spectra was found to increase by {approx}28% on reduction of GO.

Authors:
 [1]; ;  [1]
  1. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India)
Publication Date:
OSTI Identifier:
22080424
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 10; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; AUGER ELECTRON SPECTROSCOPY; ELECTRONIC STRUCTURE; ENERGY LOSSES; ENERGY-LOSS SPECTROSCOPY; FILMS; GRAPHENE; GRAPHITE; OXIDES; REDUCTION; ULTRAVIOLET RADIATION; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Sutar, D S, Central Surface Analytical Facility, Indian Institute of Technology Bombay, Mumbai 400076, Singh, Gulbagh, and Divakar Botcha, V. Electronic structure of graphene oxide and reduced graphene oxide monolayers. United States: N. p., 2012. Web. doi:10.1063/1.4749841.
Sutar, D S, Central Surface Analytical Facility, Indian Institute of Technology Bombay, Mumbai 400076, Singh, Gulbagh, & Divakar Botcha, V. Electronic structure of graphene oxide and reduced graphene oxide monolayers. United States. https://doi.org/10.1063/1.4749841
Sutar, D S, Central Surface Analytical Facility, Indian Institute of Technology Bombay, Mumbai 400076, Singh, Gulbagh, and Divakar Botcha, V. 2012. "Electronic structure of graphene oxide and reduced graphene oxide monolayers". United States. https://doi.org/10.1063/1.4749841.
@article{osti_22080424,
title = {Electronic structure of graphene oxide and reduced graphene oxide monolayers},
author = {Sutar, D S and Central Surface Analytical Facility, Indian Institute of Technology Bombay, Mumbai 400076 and Singh, Gulbagh and Divakar Botcha, V},
abstractNote = {Graphene oxide (GO) monolayers obtained by Langmuir Blodgett route and suitably treated to obtain reduced graphene oxide (RGO) monolayers were studied by photoelectron spectroscopy. Upon reduction of GO to form RGO C1s x-ray photoelectron spectra showed increase in graphitic carbon content, while ultraviolet photoelectron spectra showed increase in intensity corresponding to C2p-{pi} electrons ({approx}3.5 eV). X-ray excited Auger transitions C(KVV) and plasmon energy loss of C1s photoelectrons have been analyzed to elucidate the valence band structure. The effective number of ({pi}+{sigma}) electrons as obtained from energy loss spectra was found to increase by {approx}28% on reduction of GO.},
doi = {10.1063/1.4749841},
url = {https://www.osti.gov/biblio/22080424}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 101,
place = {United States},
year = {Mon Sep 03 00:00:00 EDT 2012},
month = {Mon Sep 03 00:00:00 EDT 2012}
}