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Title: Carrier localization in ZnO quantum wires

Abstract

ZnO quantum wires are grown on patterned silicon substrates using plasma-assisted molecular beam epitaxy. A crystallographic etch process exposes the Si(111) planes from Si(001) substrates so that V-grooves are formed. The large misfit between the Si(111) and ZnO(0001) lattice constants leads to low ZnO film quality after growth. Subsequent thermal annealing improves the electronic and structural quality of the film substantially. In the center region of the wire we find a strong photoluminescence intensity enhancement, which arises from carrier localization in the ZnO quantum wire. Two-dimensional self-consistent calculations of the electronic structure show excellent agreement with the experimental results.

Authors:
; ; ;  [1]
  1. Physics Department and CeOPP-Center for Optoelectronics and Photonics Paderborn, University of Paderborn, Warburger Str. 100, 33098 Paderborn (Germany)
Publication Date:
OSTI Identifier:
22080413
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 100; Journal Issue: 26; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CARRIERS; CRYSTALLOGRAPHY; ELECTRONIC STRUCTURE; LATTICE PARAMETERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; THIN FILMS; ZINC OXIDES

Citation Formats

Kroeger, Philipp, Ruth, Marcel, Weber, Nils, and Meier, Cedrik. Carrier localization in ZnO quantum wires. United States: N. p., 2012. Web. doi:10.1063/1.4731767.
Kroeger, Philipp, Ruth, Marcel, Weber, Nils, & Meier, Cedrik. Carrier localization in ZnO quantum wires. United States. doi:10.1063/1.4731767.
Kroeger, Philipp, Ruth, Marcel, Weber, Nils, and Meier, Cedrik. Mon . "Carrier localization in ZnO quantum wires". United States. doi:10.1063/1.4731767.
@article{osti_22080413,
title = {Carrier localization in ZnO quantum wires},
author = {Kroeger, Philipp and Ruth, Marcel and Weber, Nils and Meier, Cedrik},
abstractNote = {ZnO quantum wires are grown on patterned silicon substrates using plasma-assisted molecular beam epitaxy. A crystallographic etch process exposes the Si(111) planes from Si(001) substrates so that V-grooves are formed. The large misfit between the Si(111) and ZnO(0001) lattice constants leads to low ZnO film quality after growth. Subsequent thermal annealing improves the electronic and structural quality of the film substantially. In the center region of the wire we find a strong photoluminescence intensity enhancement, which arises from carrier localization in the ZnO quantum wire. Two-dimensional self-consistent calculations of the electronic structure show excellent agreement with the experimental results.},
doi = {10.1063/1.4731767},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 100,
place = {United States},
year = {2012},
month = {6}
}