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Title: Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Abstract

AlGaN/AlN/GaN heterostructures were grown on 6H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. Growths were carried out under Ga-rich conditions by plasma-assisted molecular beam epitaxy to determine the influence of threading dislocation density on the sheet resistance of AlGaN/AlN/GaN heterostructures. High threading dislocation density was observed to significantly degrade Hall mobility. An AlGaN/AlN/GaN heterostructure with a {approx}2 nm AlN interlayer and a threading dislocation density of {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2} achieved the very low room temperature sheet resistance of 175 {Omega}/{open_square}.

Authors:
;  [1]; ;  [2]
  1. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  2. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22080408
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 100; Journal Issue: 26; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CORRELATIONS; DENSITY; DISLOCATIONS; GALLIUM NITRIDES; HETEROJUNCTIONS; MOBILITY; MOLECULAR BEAM EPITAXY; PLASMA; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Kaun, Stephen W., Speck, James S., Wong, Man Hoi, and Mishra, Umesh K. Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. United States: N. p., 2012. Web. doi:10.1063/1.4730951.
Kaun, Stephen W., Speck, James S., Wong, Man Hoi, & Mishra, Umesh K. Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. United States. doi:10.1063/1.4730951.
Kaun, Stephen W., Speck, James S., Wong, Man Hoi, and Mishra, Umesh K. Mon . "Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy". United States. doi:10.1063/1.4730951.
@article{osti_22080408,
title = {Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy},
author = {Kaun, Stephen W. and Speck, James S. and Wong, Man Hoi and Mishra, Umesh K.},
abstractNote = {AlGaN/AlN/GaN heterostructures were grown on 6H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. Growths were carried out under Ga-rich conditions by plasma-assisted molecular beam epitaxy to determine the influence of threading dislocation density on the sheet resistance of AlGaN/AlN/GaN heterostructures. High threading dislocation density was observed to significantly degrade Hall mobility. An AlGaN/AlN/GaN heterostructure with a {approx}2 nm AlN interlayer and a threading dislocation density of {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2} achieved the very low room temperature sheet resistance of 175 {Omega}/{open_square}.},
doi = {10.1063/1.4730951},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 100,
place = {United States},
year = {2012},
month = {6}
}