Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
- Materials Department, University of California, Santa Barbara, California 93106 (United States)
- Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)
AlGaN/AlN/GaN heterostructures were grown on 6H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. Growths were carried out under Ga-rich conditions by plasma-assisted molecular beam epitaxy to determine the influence of threading dislocation density on the sheet resistance of AlGaN/AlN/GaN heterostructures. High threading dislocation density was observed to significantly degrade Hall mobility. An AlGaN/AlN/GaN heterostructure with a {approx}2 nm AlN interlayer and a threading dislocation density of {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2} achieved the very low room temperature sheet resistance of 175 {Omega}/{open_square}.
- OSTI ID:
- 22080408
- Journal Information:
- Applied Physics Letters, Vol. 100, Issue 26; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer
Plasma-assisted MBE of GaN and AlGaN on 6H SiC(0001)