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Title: InGaN/GaN single-quantum-well microdisks

Abstract

We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

Authors:
; ; ; ; ; ;  [1]
  1. Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)
Publication Date:
OSTI Identifier:
22080388
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 100; Journal Issue: 24; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BENDING; CATHODOLUMINESCENCE; ENERGY GAP; GALLIUM NITRIDES; INDIUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Hsu, Yu-Chi, Lo, Ikai, Shih, Cheng-Hung, Pang, Wen-Yuan, Hu, Chia-Hsuan, Wang, Ying-Chieh, and Chou, Mitch M. C. InGaN/GaN single-quantum-well microdisks. United States: N. p., 2012. Web. doi:10.1063/1.4729007.
Hsu, Yu-Chi, Lo, Ikai, Shih, Cheng-Hung, Pang, Wen-Yuan, Hu, Chia-Hsuan, Wang, Ying-Chieh, & Chou, Mitch M. C. InGaN/GaN single-quantum-well microdisks. United States. doi:10.1063/1.4729007.
Hsu, Yu-Chi, Lo, Ikai, Shih, Cheng-Hung, Pang, Wen-Yuan, Hu, Chia-Hsuan, Wang, Ying-Chieh, and Chou, Mitch M. C. Mon . "InGaN/GaN single-quantum-well microdisks". United States. doi:10.1063/1.4729007.
@article{osti_22080388,
title = {InGaN/GaN single-quantum-well microdisks},
author = {Hsu, Yu-Chi and Lo, Ikai and Shih, Cheng-Hung and Pang, Wen-Yuan and Hu, Chia-Hsuan and Wang, Ying-Chieh and Chou, Mitch M. C.},
abstractNote = {We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.},
doi = {10.1063/1.4729007},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 100,
place = {United States},
year = {2012},
month = {6}
}