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Title: Atomic intermixing in short-period InAs/GaSb superlattices

Abstract

High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and laser-assisted local-electrode atom-probe (LEAP) tomography are utilizing for characterizing short-period InAs/GaSb superlattices with an emphasis on obtaining the atomic concentration profiles with sub-nm resolution. HAADF-STEM permits direct visualization and counting of atomic columns in individual sub-layers. The spatial resolution of HAADF-STEM is sufficient to resolve the anion-cation dumbbells and, on this basis, to follow the atomic distributions across a superlattice. Both methods confirm that InAs-on-GaSb interfaces are wider than GaSb-on-InAs interfaces. The interfacial widths deduced from LEAP tomographic measurements are slightly larger than those extracted from HAADF-STEM micrographs, with the maximum total width not exceeding 4.5 monolayers. LEAP tomographic analysis shows the presence of about 7 at. % of Sb atoms in the middle of the InAs sub-layers, as a result of As/Sb substitutions during growth.

Authors:
; ; ;  [1]; ;  [2]
  1. Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)
  2. Department of Materials Science and Engineering and Northwestern University Center for Atom-Probe Tomography, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22080387
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 100; Journal Issue: 24; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; DISTRIBUTION; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; LASER MATERIALS; LASER RADIATION; LAYERS; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPATIAL RESOLUTION; SUPERLATTICES; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Ashuach, Y., Kauffmann, Y., Amouyal, Y., Zolotoyabko, E., Isheim, D., and Seidman, D. N. Atomic intermixing in short-period InAs/GaSb superlattices. United States: N. p., 2012. Web. doi:10.1063/1.4729058.
Ashuach, Y., Kauffmann, Y., Amouyal, Y., Zolotoyabko, E., Isheim, D., & Seidman, D. N. Atomic intermixing in short-period InAs/GaSb superlattices. United States. doi:10.1063/1.4729058.
Ashuach, Y., Kauffmann, Y., Amouyal, Y., Zolotoyabko, E., Isheim, D., and Seidman, D. N. Mon . "Atomic intermixing in short-period InAs/GaSb superlattices". United States. doi:10.1063/1.4729058.
@article{osti_22080387,
title = {Atomic intermixing in short-period InAs/GaSb superlattices},
author = {Ashuach, Y. and Kauffmann, Y. and Amouyal, Y. and Zolotoyabko, E. and Isheim, D. and Seidman, D. N.},
abstractNote = {High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and laser-assisted local-electrode atom-probe (LEAP) tomography are utilizing for characterizing short-period InAs/GaSb superlattices with an emphasis on obtaining the atomic concentration profiles with sub-nm resolution. HAADF-STEM permits direct visualization and counting of atomic columns in individual sub-layers. The spatial resolution of HAADF-STEM is sufficient to resolve the anion-cation dumbbells and, on this basis, to follow the atomic distributions across a superlattice. Both methods confirm that InAs-on-GaSb interfaces are wider than GaSb-on-InAs interfaces. The interfacial widths deduced from LEAP tomographic measurements are slightly larger than those extracted from HAADF-STEM micrographs, with the maximum total width not exceeding 4.5 monolayers. LEAP tomographic analysis shows the presence of about 7 at. % of Sb atoms in the middle of the InAs sub-layers, as a result of As/Sb substitutions during growth.},
doi = {10.1063/1.4729058},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 100,
place = {United States},
year = {2012},
month = {6}
}