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Title: Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

Abstract

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channel rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Applied Materials, Varian Semiconductor Equipment, 35 Dory Road, Gloucester, Massachusetts 01930 (United States)
Publication Date:
OSTI Identifier:
22075736
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; AMORPHOUS STATE; ANNEALING; ARSENIC; BORON; CARBON; CRYOGENICS; GERMANIUM; IMPLANTS; INDIUM; ION IMPLANTATION; LAYERS; NANOSTRUCTURES; NITROGEN IONS; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; TEMPERATURE RANGE 0273-0400 K; THRESHOLD DOSE

Citation Formats

Park, Hugh, Todorov, Stan, Colombeau, Benjamin, Rodier, Dennis, Kouzminov, Dimitry, Zou Wei, Guo Baonian, Khasgiwale, Niranjan, and Decker-Lucke, Kurt. Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies. United States: N. p., 2012. Web. doi:10.1063/1.4766494.
Park, Hugh, Todorov, Stan, Colombeau, Benjamin, Rodier, Dennis, Kouzminov, Dimitry, Zou Wei, Guo Baonian, Khasgiwale, Niranjan, & Decker-Lucke, Kurt. Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies. United States. doi:10.1063/1.4766494.
Park, Hugh, Todorov, Stan, Colombeau, Benjamin, Rodier, Dennis, Kouzminov, Dimitry, Zou Wei, Guo Baonian, Khasgiwale, Niranjan, and Decker-Lucke, Kurt. Tue . "Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies". United States. doi:10.1063/1.4766494.
@article{osti_22075736,
title = {Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies},
author = {Park, Hugh and Todorov, Stan and Colombeau, Benjamin and Rodier, Dennis and Kouzminov, Dimitry and Zou Wei and Guo Baonian and Khasgiwale, Niranjan and Decker-Lucke, Kurt},
abstractNote = {We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channel rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.},
doi = {10.1063/1.4766494},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}