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Title: Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate

Abstract

Here, we present and discuss the electrical characteristics of fully depleted MOSFET transistors of planar and tridimensional architecture, doped by Plasma Immersion Ion Implantation (PIII) or Beam Line Ion Implantation (BLII). Both techniques delivered similar and satisfactory results in considering the planar architecture. For tri-dimensional Tri-Gate transistors, the results obtained with PIII are superior.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2]
  1. IBS, ZI Peynier-Rousset, Avenue Gaston Imbert prolongee, 13 790 Peynier (France) and CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9 (France)
  2. (France)
Publication Date:
OSTI Identifier:
22075735
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; DOPED MATERIALS; ION BEAMS; ION IMPLANTATION; MOSFET; PLASMA; SEMICONDUCTOR MATERIALS; SILICON

Citation Formats

Duchaine, J., Milesi, F., Coquand, R., Barraud, S., Reboh, S., Gonzatti, F., Mazen, F., Torregrosa, Frank, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, STMicroelectronics, 850, rue J. Monnet, 38926 Crolles, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, and IBS, ZI Peynier-Rousset, Avenue Gaston Imbert prolongee, 13 790 Peynier. Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate. United States: N. p., 2012. Web. doi:10.1063/1.4766492.
Duchaine, J., Milesi, F., Coquand, R., Barraud, S., Reboh, S., Gonzatti, F., Mazen, F., Torregrosa, Frank, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, STMicroelectronics, 850, rue J. Monnet, 38926 Crolles, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, & IBS, ZI Peynier-Rousset, Avenue Gaston Imbert prolongee, 13 790 Peynier. Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate. United States. doi:10.1063/1.4766492.
Duchaine, J., Milesi, F., Coquand, R., Barraud, S., Reboh, S., Gonzatti, F., Mazen, F., Torregrosa, Frank, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, STMicroelectronics, 850, rue J. Monnet, 38926 Crolles, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, and IBS, ZI Peynier-Rousset, Avenue Gaston Imbert prolongee, 13 790 Peynier. Tue . "Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate". United States. doi:10.1063/1.4766492.
@article{osti_22075735,
title = {Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate},
author = {Duchaine, J. and Milesi, F. and Coquand, R. and Barraud, S. and Reboh, S. and Gonzatti, F. and Mazen, F. and Torregrosa, Frank and CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9 and STMicroelectronics, 850, rue J. Monnet, 38926 Crolles and CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9 and IBS, ZI Peynier-Rousset, Avenue Gaston Imbert prolongee, 13 790 Peynier},
abstractNote = {Here, we present and discuss the electrical characteristics of fully depleted MOSFET transistors of planar and tridimensional architecture, doped by Plasma Immersion Ion Implantation (PIII) or Beam Line Ion Implantation (BLII). Both techniques delivered similar and satisfactory results in considering the planar architecture. For tri-dimensional Tri-Gate transistors, the results obtained with PIII are superior.},
doi = {10.1063/1.4766492},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1496,
place = {United States},
year = {Tue Nov 06 00:00:00 EST 2012},
month = {Tue Nov 06 00:00:00 EST 2012}
}