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Title: Plasma process optimization for N-type doping applications

Abstract

Plasma doping (PLAD) has been adopted across the implant technology space and into high volume production for both conventional DRAM and NAND doping applications. PLAD has established itself as an alternative to traditional ion implantation by beamline implantation. The push for high doping concentration, shallow doping depth, and conformal doping capability expand the need for a PLAD solution to meet such requirements. The unique doping profile and doping characteristics at high dose rates allow for PLAD to deliver a high throughput, differentiated solution to meet the demand of evolving transistor technology. In the PLAD process, ions are accelerated to the wafer as with a negative wafer bias applied to the wafer. Competing mechanisms, such as deposition, sputtering, and etching inherent in plasma doping require unique control and process optimization. In this work, we look at the distinctive process tool control and characterization features which enable an optimized doping process using n-type (PH{sub 3} or AsH{sub 3}) chemistries. The data in this paper will draw the relationship between process optimization through plasma chemistry study to the wafer level result.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Applied Materials, Inc., Varian Semiconductor Business Unit, 35 Dory Road, Gloucester, MA 01930 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22075734
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ARSENIC HYDRIDES; CHEMISTRY; DEPOSITION; DOSE RATES; ETCHING; IMPLANTS; ION IMPLANTATION; OPTIMIZATION; PHOSPHORUS HYDRIDES; PLASMA; PROCESSING; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING

Citation Formats

Raj, Deven, Persing, Harold, Salimian, Siamak, Lacey, Kerry, Qin Shu, Hu, Jeff Y., McTeer, Allen, and Micron Technology, Inc., 8000 S. Federal Way, Boise, ID 83707. Plasma process optimization for N-type doping applications. United States: N. p., 2012. Web. doi:10.1063/1.4766491.
Raj, Deven, Persing, Harold, Salimian, Siamak, Lacey, Kerry, Qin Shu, Hu, Jeff Y., McTeer, Allen, & Micron Technology, Inc., 8000 S. Federal Way, Boise, ID 83707. Plasma process optimization for N-type doping applications. United States. doi:10.1063/1.4766491.
Raj, Deven, Persing, Harold, Salimian, Siamak, Lacey, Kerry, Qin Shu, Hu, Jeff Y., McTeer, Allen, and Micron Technology, Inc., 8000 S. Federal Way, Boise, ID 83707. Tue . "Plasma process optimization for N-type doping applications". United States. doi:10.1063/1.4766491.
@article{osti_22075734,
title = {Plasma process optimization for N-type doping applications},
author = {Raj, Deven and Persing, Harold and Salimian, Siamak and Lacey, Kerry and Qin Shu and Hu, Jeff Y. and McTeer, Allen and Micron Technology, Inc., 8000 S. Federal Way, Boise, ID 83707},
abstractNote = {Plasma doping (PLAD) has been adopted across the implant technology space and into high volume production for both conventional DRAM and NAND doping applications. PLAD has established itself as an alternative to traditional ion implantation by beamline implantation. The push for high doping concentration, shallow doping depth, and conformal doping capability expand the need for a PLAD solution to meet such requirements. The unique doping profile and doping characteristics at high dose rates allow for PLAD to deliver a high throughput, differentiated solution to meet the demand of evolving transistor technology. In the PLAD process, ions are accelerated to the wafer as with a negative wafer bias applied to the wafer. Competing mechanisms, such as deposition, sputtering, and etching inherent in plasma doping require unique control and process optimization. In this work, we look at the distinctive process tool control and characterization features which enable an optimized doping process using n-type (PH{sub 3} or AsH{sub 3}) chemistries. The data in this paper will draw the relationship between process optimization through plasma chemistry study to the wafer level result.},
doi = {10.1063/1.4766491},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}