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Title: Optical doping of Al{sub x}Ga{sub 1-x}N compounds by ion implantation of Tm ions

Abstract

Al{sub x}Ga{sub 1-x}N (0<=}1) samples grown by halide vapor phase epitaxy on (0001) sapphire were implanted with Tm ions to optimize the conditions to achieve maximum optical efficiency. The ions were implanted under random and channeled orientations with a fluence of 1 Multiplication-Sign 10{sup 15}cm{sup -2}. The damage profile and the defects' nature were investigated by Rutherford Backscattering/Channeling Spectrometry and High Resolution X-ray Diffraction. The structural measurements show a higher resistance of the lattice to irradiation damage with the increase of the AlN content. Results of the angular scans measured along the <0001> axis for samples with AlN contents of 0.15 and 0.77 suggest a relation between the AlN content and Tm specific sites in the lattice. Rapid thermal annealing treatments under N{sub 2} ambient were performed to remove damage and promote optical activation of rare earth intra-4f{sup n} transitions. After annealing the observed intraionic emissions of Tm{sup 3+} ions were characterized by photoluminescence.

Authors:
; ; ; ; ; ; ;  [1]
  1. IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem (Portugal)
Publication Date:
OSTI Identifier:
22075733
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ANNEALING; CHANNELING; GALLIUM COMPOUNDS; ION IMPLANTATION; IRRADIATION; LATTICE PARAMETERS; PHOTOLUMINESCENCE; RANDOMNESS; RESOLUTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; THULIUM IONS; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION

Citation Formats

Fialho, M, Lorenz, K, Magalhaes, S, Redondo-Cubero, A, Rodrigues, J, Santos, N F, Monteiro, T, Alves, E, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal, and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal and Departamento de Fisica e i3N, Universidade de Aveiro, 3810-193 Aveiro, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Departamento de Fisica e i3N, Universidade de Aveiro, 3810-193 Aveiro, and IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal, and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa. Optical doping of Al{sub x}Ga{sub 1-x}N compounds by ion implantation of Tm ions. United States: N. p., 2012. Web. doi:10.1063/1.4766490.
Fialho, M, Lorenz, K, Magalhaes, S, Redondo-Cubero, A, Rodrigues, J, Santos, N F, Monteiro, T, Alves, E, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal, and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal and Departamento de Fisica e i3N, Universidade de Aveiro, 3810-193 Aveiro, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Departamento de Fisica e i3N, Universidade de Aveiro, 3810-193 Aveiro, & IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal, and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa. Optical doping of Al{sub x}Ga{sub 1-x}N compounds by ion implantation of Tm ions. United States. https://doi.org/10.1063/1.4766490
Fialho, M, Lorenz, K, Magalhaes, S, Redondo-Cubero, A, Rodrigues, J, Santos, N F, Monteiro, T, Alves, E, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal, and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal and Departamento de Fisica e i3N, Universidade de Aveiro, 3810-193 Aveiro, IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Departamento de Fisica e i3N, Universidade de Aveiro, 3810-193 Aveiro, and IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal, and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa. 2012. "Optical doping of Al{sub x}Ga{sub 1-x}N compounds by ion implantation of Tm ions". United States. https://doi.org/10.1063/1.4766490.
@article{osti_22075733,
title = {Optical doping of Al{sub x}Ga{sub 1-x}N compounds by ion implantation of Tm ions},
author = {Fialho, M and Lorenz, K and Magalhaes, S and Redondo-Cubero, A and Rodrigues, J and Santos, N F and Monteiro, T and Alves, E and IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal, and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa and IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal and Departamento de Fisica e i3N, Universidade de Aveiro, 3810-193 Aveiro and IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem and Departamento de Fisica e i3N, Universidade de Aveiro, 3810-193 Aveiro and IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem, Portugal, and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa},
abstractNote = {Al{sub x}Ga{sub 1-x}N (0<=}1) samples grown by halide vapor phase epitaxy on (0001) sapphire were implanted with Tm ions to optimize the conditions to achieve maximum optical efficiency. The ions were implanted under random and channeled orientations with a fluence of 1 Multiplication-Sign 10{sup 15}cm{sup -2}. The damage profile and the defects' nature were investigated by Rutherford Backscattering/Channeling Spectrometry and High Resolution X-ray Diffraction. The structural measurements show a higher resistance of the lattice to irradiation damage with the increase of the AlN content. Results of the angular scans measured along the <0001> axis for samples with AlN contents of 0.15 and 0.77 suggest a relation between the AlN content and Tm specific sites in the lattice. Rapid thermal annealing treatments under N{sub 2} ambient were performed to remove damage and promote optical activation of rare earth intra-4f{sup n} transitions. After annealing the observed intraionic emissions of Tm{sup 3+} ions were characterized by photoluminescence.},
doi = {10.1063/1.4766490},
url = {https://www.osti.gov/biblio/22075733}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {Tue Nov 06 00:00:00 EST 2012},
month = {Tue Nov 06 00:00:00 EST 2012}
}