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Title: Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers

Abstract

Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology. The detectors have a size of the active area of 0.4 Multiplication-Sign 0.4 and 0.9 Multiplication-Sign 0.9 cm{sup 2}. Electrical characteristics of fabricated detectors and results of measurements of fast neutrons spectra of {sup 241}Am-Be source by the recoil protons method are discussed.

Authors:
; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2]
  1. National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow (Russian Federation)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22075732
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMERICIUM 241; FAST NEUTRONS; GALLIUM ARSENIDES; ION IMPLANTATION; LAYERS; NEUTRON DETECTION; NEUTRON DETECTORS; PROTONS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS

Citation Formats

Baryshnikov, F. M., Britvich, G. I., Chernykh, A. V., Chernykh, S. V., Chubenko, A. P., Didenko, S. I., Koltsov, G. I., Institute for High Energy Physics, Polshhad nauki 1, 142281 Protvino, National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow, P.N. Lebedev Physical Institute of the RAS, Leninskiy prospect 53, 119991 Moscow, and National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow. Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers. United States: N. p., 2012. Web. doi:10.1063/1.4766487.
Baryshnikov, F. M., Britvich, G. I., Chernykh, A. V., Chernykh, S. V., Chubenko, A. P., Didenko, S. I., Koltsov, G. I., Institute for High Energy Physics, Polshhad nauki 1, 142281 Protvino, National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow, P.N. Lebedev Physical Institute of the RAS, Leninskiy prospect 53, 119991 Moscow, & National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow. Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers. United States. doi:10.1063/1.4766487.
Baryshnikov, F. M., Britvich, G. I., Chernykh, A. V., Chernykh, S. V., Chubenko, A. P., Didenko, S. I., Koltsov, G. I., Institute for High Energy Physics, Polshhad nauki 1, 142281 Protvino, National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow, P.N. Lebedev Physical Institute of the RAS, Leninskiy prospect 53, 119991 Moscow, and National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow. Tue . "Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers". United States. doi:10.1063/1.4766487.
@article{osti_22075732,
title = {Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers},
author = {Baryshnikov, F. M. and Britvich, G. I. and Chernykh, A. V. and Chernykh, S. V. and Chubenko, A. P. and Didenko, S. I. and Koltsov, G. I. and Institute for High Energy Physics, Polshhad nauki 1, 142281 Protvino and National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow and P.N. Lebedev Physical Institute of the RAS, Leninskiy prospect 53, 119991 Moscow and National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow},
abstractNote = {Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology. The detectors have a size of the active area of 0.4 Multiplication-Sign 0.4 and 0.9 Multiplication-Sign 0.9 cm{sup 2}. Electrical characteristics of fabricated detectors and results of measurements of fast neutrons spectra of {sup 241}Am-Be source by the recoil protons method are discussed.},
doi = {10.1063/1.4766487},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}