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Title: Beam current improvement and source life performance of diboron tetrafluoride (B{sub 2}F{sub 4}) for boron implantation on applied materials VIISta high current implanters

Abstract

High dose p-type boron doping is a significant productivity challenge for conventional beamline ion implant tools in semiconductor wafer fabrication. Currently, the primary feed gas for boron implantation is boron trifluoride, BF{sub 3}. This paper discusses the testing performed on Applied Materials VIISta high current implanters using diboron tetrafluoride, B{sub 2}F{sub 4}, as an alternative gaseous boron source material that can be a replacement for BF{sub 3}. Both the beam current and source life for B{sub 2}F{sub 4} were evaluated. B{sub 2}F{sub 4} enables a significant beam current improvement over BF{sub 3} while maintaining good source life, beam stability, and a high automatic beam setup success rate.

Authors:
; ; ; ;  [1];  [2];  [2]
  1. ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22075725
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; 36 MATERIALS SCIENCE; BEAM CURRENTS; BEAM TRANSPORT; BORON; BORON CHLORIDES; BORON FLUORIDES; CRYSTAL DOPING; DOPED MATERIALS; FABRICATION; IMPLANTS; ION BEAMS; ION IMPLANTATION; ION SOURCES; PERFORMANCE; SEMICONDUCTOR MATERIALS

Citation Formats

Tang Ying, Bassom, Neil J., Young, James, Sweeney, Joseph, Ray, Richard, Applied Materials Inc., 35 Dory Road, Gloucester, MA 01930, and ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Beam current improvement and source life performance of diboron tetrafluoride (B{sub 2}F{sub 4}) for boron implantation on applied materials VIISta high current implanters. United States: N. p., 2012. Web. doi:10.1063/1.4766569.
Tang Ying, Bassom, Neil J., Young, James, Sweeney, Joseph, Ray, Richard, Applied Materials Inc., 35 Dory Road, Gloucester, MA 01930, & ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Beam current improvement and source life performance of diboron tetrafluoride (B{sub 2}F{sub 4}) for boron implantation on applied materials VIISta high current implanters. United States. doi:10.1063/1.4766569.
Tang Ying, Bassom, Neil J., Young, James, Sweeney, Joseph, Ray, Richard, Applied Materials Inc., 35 Dory Road, Gloucester, MA 01930, and ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Tue . "Beam current improvement and source life performance of diboron tetrafluoride (B{sub 2}F{sub 4}) for boron implantation on applied materials VIISta high current implanters". United States. doi:10.1063/1.4766569.
@article{osti_22075725,
title = {Beam current improvement and source life performance of diboron tetrafluoride (B{sub 2}F{sub 4}) for boron implantation on applied materials VIISta high current implanters},
author = {Tang Ying and Bassom, Neil J. and Young, James and Sweeney, Joseph and Ray, Richard and Applied Materials Inc., 35 Dory Road, Gloucester, MA 01930 and ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810},
abstractNote = {High dose p-type boron doping is a significant productivity challenge for conventional beamline ion implant tools in semiconductor wafer fabrication. Currently, the primary feed gas for boron implantation is boron trifluoride, BF{sub 3}. This paper discusses the testing performed on Applied Materials VIISta high current implanters using diboron tetrafluoride, B{sub 2}F{sub 4}, as an alternative gaseous boron source material that can be a replacement for BF{sub 3}. Both the beam current and source life for B{sub 2}F{sub 4} were evaluated. B{sub 2}F{sub 4} enables a significant beam current improvement over BF{sub 3} while maintaining good source life, beam stability, and a high automatic beam setup success rate.},
doi = {10.1063/1.4766569},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}