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Title: Plasma chemistry study of PLAD processes

Abstract

Plasma doping (PLAD) shows very different impurity profiles compared to the conventional beam-line-based ion implantations due to its non-mass separation property and plasma environment. There is no simulation for PLAD process so far due to a lack of a dopant profile model. Several factors determine impurity profiles of PLAD process. The most significant factors are: plasma chemistry and deposition/etching characteristics of multi-ion species plasmas. In this paper, we present plasma chemistry and deposition/etching characteristics of PLAD processes versus co-gas dilutions. Four dopant plasmas including B{sub 2}H{sub 6}, BF{sub 3}, AsH{sub 3}, and PH{sub 3}, and two non-dopant plasmas including CH{sub 4} and GeH{sub 4} are studied and demonstrated.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Nanya Technology Inc., Santa Clara, CA 95054 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22075724
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ARSENIC HYDRIDES; BORON FLUORIDES; BORON HYDRIDES; CHEMISTRY; DEPOSITION; ETCHING; GERMANIUM HYDRIDES; METHANE; PHOSPHORUS HYDRIDES; PLASMA; PLASMA IMPURITIES; SPUTTERING

Citation Formats

Qin Shu, Brumfield, Kyle, Liu, Lequn Jennifer, Hu, Yongjun Jeff, McTeer, Allen, Hsu, Wei Hui, Wang Maoying, and Micron Technology Inc., Boise, ID 83707. Plasma chemistry study of PLAD processes. United States: N. p., 2012. Web. doi:10.1063/1.4766568.
Qin Shu, Brumfield, Kyle, Liu, Lequn Jennifer, Hu, Yongjun Jeff, McTeer, Allen, Hsu, Wei Hui, Wang Maoying, & Micron Technology Inc., Boise, ID 83707. Plasma chemistry study of PLAD processes. United States. doi:10.1063/1.4766568.
Qin Shu, Brumfield, Kyle, Liu, Lequn Jennifer, Hu, Yongjun Jeff, McTeer, Allen, Hsu, Wei Hui, Wang Maoying, and Micron Technology Inc., Boise, ID 83707. Tue . "Plasma chemistry study of PLAD processes". United States. doi:10.1063/1.4766568.
@article{osti_22075724,
title = {Plasma chemistry study of PLAD processes},
author = {Qin Shu and Brumfield, Kyle and Liu, Lequn Jennifer and Hu, Yongjun Jeff and McTeer, Allen and Hsu, Wei Hui and Wang Maoying and Micron Technology Inc., Boise, ID 83707},
abstractNote = {Plasma doping (PLAD) shows very different impurity profiles compared to the conventional beam-line-based ion implantations due to its non-mass separation property and plasma environment. There is no simulation for PLAD process so far due to a lack of a dopant profile model. Several factors determine impurity profiles of PLAD process. The most significant factors are: plasma chemistry and deposition/etching characteristics of multi-ion species plasmas. In this paper, we present plasma chemistry and deposition/etching characteristics of PLAD processes versus co-gas dilutions. Four dopant plasmas including B{sub 2}H{sub 6}, BF{sub 3}, AsH{sub 3}, and PH{sub 3}, and two non-dopant plasmas including CH{sub 4} and GeH{sub 4} are studied and demonstrated.},
doi = {10.1063/1.4766568},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}