Plasma chemistry study of PLAD processes
- Nanya Technology Inc., Santa Clara, CA 95054 (United States)
Plasma doping (PLAD) shows very different impurity profiles compared to the conventional beam-line-based ion implantations due to its non-mass separation property and plasma environment. There is no simulation for PLAD process so far due to a lack of a dopant profile model. Several factors determine impurity profiles of PLAD process. The most significant factors are: plasma chemistry and deposition/etching characteristics of multi-ion species plasmas. In this paper, we present plasma chemistry and deposition/etching characteristics of PLAD processes versus co-gas dilutions. Four dopant plasmas including B{sub 2}H{sub 6}, BF{sub 3}, AsH{sub 3}, and PH{sub 3}, and two non-dopant plasmas including CH{sub 4} and GeH{sub 4} are studied and demonstrated.
- OSTI ID:
- 22075724
- Journal Information:
- AIP Conference Proceedings, Vol. 1496, Issue 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Formation of deep sub-micron buried channel pMOSFETs with plasma doping
Optimization and Control of Plasma Doping Processes