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Title: Mass and charge overlaps in beamline implantation into compound semiconductor materials

Abstract

Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions, producing molecular break up and charge exchange in the accelerator beamline, are examined for ion implantation into compound semiconductors. The effects of the choice of plasma gas elements for Be{sup +} implants are examined as an example.

Authors:
; ; ; ;  [1];  [2];  [2]
  1. Current Scientific, 1729 Comstock Way, San Jose, CA 95124 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22075723
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 43 PARTICLE ACCELERATORS; BEAM EXTRACTION; BERYLLIUM; BERYLLIUM IONS; CHARGE EXCHANGE; ELECTRIC ARCS; ION BEAMS; ION IMPLANTATION; PLASMA; SEMICONDUCTOR MATERIALS

Citation Formats

Current, M. I., Eddy, R., Hudak, C., Serfass, J., Mount, G., Core Systems, 1050 Kifer Rd., Sunnyvale, CA 94086, and Evans Analytical Group, 810 Kifer Rd., Sunnyvale, CA 95051. Mass and charge overlaps in beamline implantation into compound semiconductor materials. United States: N. p., 2012. Web. doi:10.1063/1.4766567.
Current, M. I., Eddy, R., Hudak, C., Serfass, J., Mount, G., Core Systems, 1050 Kifer Rd., Sunnyvale, CA 94086, & Evans Analytical Group, 810 Kifer Rd., Sunnyvale, CA 95051. Mass and charge overlaps in beamline implantation into compound semiconductor materials. United States. doi:10.1063/1.4766567.
Current, M. I., Eddy, R., Hudak, C., Serfass, J., Mount, G., Core Systems, 1050 Kifer Rd., Sunnyvale, CA 94086, and Evans Analytical Group, 810 Kifer Rd., Sunnyvale, CA 95051. Tue . "Mass and charge overlaps in beamline implantation into compound semiconductor materials". United States. doi:10.1063/1.4766567.
@article{osti_22075723,
title = {Mass and charge overlaps in beamline implantation into compound semiconductor materials},
author = {Current, M. I. and Eddy, R. and Hudak, C. and Serfass, J. and Mount, G. and Core Systems, 1050 Kifer Rd., Sunnyvale, CA 94086 and Evans Analytical Group, 810 Kifer Rd., Sunnyvale, CA 95051},
abstractNote = {Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions, producing molecular break up and charge exchange in the accelerator beamline, are examined for ion implantation into compound semiconductors. The effects of the choice of plasma gas elements for Be{sup +} implants are examined as an example.},
doi = {10.1063/1.4766567},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}