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Title: Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

Abstract

The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

Authors:
; ; ; ; ; ;  [1];  [2];  [3];  [4];  [5]
  1. Lehrstuhl fuer Elektronische Bauelemente (LEB), Universitaet Erlangen-Nuernberg, Cauerstrasse 6, 91058 Erlangen (Germany)
  2. (IISB), Schottkystrasse 10, 91058 Erlangen (Germany)
  3. (LEB), Universitaet Erlangen-Nuernberg, Cauerstrasse 6, 91058 Erlangen (Germany) and Fraunhofer-Institut fuer Integrierte Systeme und Bauelementetechnologie (IISB), Schottkystrasse 10, 9 (Germany)
  4. (LMM), Universitaet des Saarlandes, Campus A5.1, 66123 Saarbruecken (Germany)
  5. (LEB), Universitaet Erlangen-Nuernberg, Cauerstrasse 6, 91058 Erlangen (Germany) and Fraunhofer-Institut fuer Integrierte Systeme und Bauelementetechnologie (IISB), Schottkystrasse 10,91 (Germany)
Publication Date:
OSTI Identifier:
22075710
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; CESIUM; CHANNELING; EPITAXY; INTERFACES; ION IMPLANTATION; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; RECRYSTALLIZATION; RUBIDIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEGREGATION; SEMICONDUCTOR MATERIALS; SILICON; SOLIDS; SURFACES

Citation Formats

Maier, R., Haeublein, V., Ryssel, H., Voellm, H., Feili, D., Seidel, H., Frey, L., Fraunhofer-Institut fuer Integrierte Systeme und Bauelementetechnologie, Lehrstuhl fuer Elektronische Bauelemente, Lehrstuhl fuer Mikromechanik, Mikrofluidik/ Mikroaktorik, and Lehrstuhl fuer Elektronische Bauelemente. Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium. United States: N. p., 2012. Web. doi:10.1063/1.4766542.
Maier, R., Haeublein, V., Ryssel, H., Voellm, H., Feili, D., Seidel, H., Frey, L., Fraunhofer-Institut fuer Integrierte Systeme und Bauelementetechnologie, Lehrstuhl fuer Elektronische Bauelemente, Lehrstuhl fuer Mikromechanik, Mikrofluidik/ Mikroaktorik, & Lehrstuhl fuer Elektronische Bauelemente. Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium. United States. doi:10.1063/1.4766542.
Maier, R., Haeublein, V., Ryssel, H., Voellm, H., Feili, D., Seidel, H., Frey, L., Fraunhofer-Institut fuer Integrierte Systeme und Bauelementetechnologie, Lehrstuhl fuer Elektronische Bauelemente, Lehrstuhl fuer Mikromechanik, Mikrofluidik/ Mikroaktorik, and Lehrstuhl fuer Elektronische Bauelemente. Tue . "Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium". United States. doi:10.1063/1.4766542.
@article{osti_22075710,
title = {Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium},
author = {Maier, R. and Haeublein, V. and Ryssel, H. and Voellm, H. and Feili, D. and Seidel, H. and Frey, L. and Fraunhofer-Institut fuer Integrierte Systeme und Bauelementetechnologie and Lehrstuhl fuer Elektronische Bauelemente and Lehrstuhl fuer Mikromechanik, Mikrofluidik/ Mikroaktorik and Lehrstuhl fuer Elektronische Bauelemente},
abstractNote = {The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.},
doi = {10.1063/1.4766542},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}