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Title: Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

Abstract

The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si{sup +} at energy 5 keV and a dose 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}. As ion were implanted at 2 keV using 3 different doses: 1 Multiplication-Sign 10{sup 14}, 5 Multiplication-Sign 10{sup 14} and 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550 Degree-Sign C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [3]
  1. CMM, Fondazione Bruno Kessler, Via Sommarive 18. 38123 Povo - Trento (Italy)
  2. (Greece)
  3. (United Kingdom)
Publication Date:
OSTI Identifier:
22075709
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ARSENIC; ARSENIC IONS; CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXY; ION IMPLANTATION; KEV RANGE; LAYERS; MASS SPECTRA; MASS SPECTROSCOPY; NANOSTRUCTURES; SEGREGATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON IONS; SOLIDS; SURFACES

Citation Formats

Demenev, E., Giubertoni, D., Gennaro, S., Bersani, M., Hourdakis, E., Nassiopoulou, A. G., Reading, M. A., Berg, J. A. van den, NCSR Demokritos, IMEL, Terma Patriarchou Grigoriou, Aghia Paraskevi, Athens, and Centre for Materials and Physics, University of Salford. Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. United States: N. p., 2012. Web. doi:10.1063/1.4766541.
Demenev, E., Giubertoni, D., Gennaro, S., Bersani, M., Hourdakis, E., Nassiopoulou, A. G., Reading, M. A., Berg, J. A. van den, NCSR Demokritos, IMEL, Terma Patriarchou Grigoriou, Aghia Paraskevi, Athens, & Centre for Materials and Physics, University of Salford. Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. United States. doi:10.1063/1.4766541.
Demenev, E., Giubertoni, D., Gennaro, S., Bersani, M., Hourdakis, E., Nassiopoulou, A. G., Reading, M. A., Berg, J. A. van den, NCSR Demokritos, IMEL, Terma Patriarchou Grigoriou, Aghia Paraskevi, Athens, and Centre for Materials and Physics, University of Salford. Tue . "Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers". United States. doi:10.1063/1.4766541.
@article{osti_22075709,
title = {Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers},
author = {Demenev, E. and Giubertoni, D. and Gennaro, S. and Bersani, M. and Hourdakis, E. and Nassiopoulou, A. G. and Reading, M. A. and Berg, J. A. van den and NCSR Demokritos, IMEL, Terma Patriarchou Grigoriou, Aghia Paraskevi, Athens and Centre for Materials and Physics, University of Salford},
abstractNote = {The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si{sup +} at energy 5 keV and a dose 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}. As ion were implanted at 2 keV using 3 different doses: 1 Multiplication-Sign 10{sup 14}, 5 Multiplication-Sign 10{sup 14} and 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550 Degree-Sign C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.},
doi = {10.1063/1.4766541},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}