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Title: Modeling boron profiles in silicon after pulsed excimer laser annealing

Abstract

In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of {approx}180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measurement had to be taken into account to reproduce the measured profiles.

Authors:
; ; ; ; ; ;  [1];  [2];  [3];  [4]
  1. Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)
  2. (France)
  3. (Italy)
  4. (Germany) and Chair of Electron Devices, University of Erlangen-Nuernberg, Cauerstrasse 6, 91058 Erlangen (Germany)
Publication Date:
OSTI Identifier:
22075707
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ADSORPTION; ANNEALING; BORON; COMPUTERIZED SIMULATION; DOPED MATERIALS; EXCIMER LASERS; ION BEAMS; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTRA; MASS SPECTROSCOPY; MELTING; SEMICONDUCTOR MATERIALS; SILICON; THERMAL DIFFUSION

Citation Formats

Hackenberg, M., Huet, K., Negru, R., Venturini, J., Fisicaro, G., La Magna, A., Pichler, P., Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers, CNR IMM, Z.I VIII Strada 5, 95121 Catania, and Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen. Modeling boron profiles in silicon after pulsed excimer laser annealing. United States: N. p., 2012. Web. doi:10.1063/1.4766533.
Hackenberg, M., Huet, K., Negru, R., Venturini, J., Fisicaro, G., La Magna, A., Pichler, P., Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers, CNR IMM, Z.I VIII Strada 5, 95121 Catania, & Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen. Modeling boron profiles in silicon after pulsed excimer laser annealing. United States. doi:10.1063/1.4766533.
Hackenberg, M., Huet, K., Negru, R., Venturini, J., Fisicaro, G., La Magna, A., Pichler, P., Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers, CNR IMM, Z.I VIII Strada 5, 95121 Catania, and Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen. Tue . "Modeling boron profiles in silicon after pulsed excimer laser annealing". United States. doi:10.1063/1.4766533.
@article{osti_22075707,
title = {Modeling boron profiles in silicon after pulsed excimer laser annealing},
author = {Hackenberg, M. and Huet, K. and Negru, R. and Venturini, J. and Fisicaro, G. and La Magna, A. and Pichler, P. and Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers and CNR IMM, Z.I VIII Strada 5, 95121 Catania and Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen},
abstractNote = {In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of {approx}180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measurement had to be taken into account to reproduce the measured profiles.},
doi = {10.1063/1.4766533},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}