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Title: BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion

Abstract

In the race for highly doped ultra-shallow junctions (USJs) in complementary metal oxide semi-conductor (CMOS) technologies, plasma immersion ion implantation (PIII) is a promising alternative to traditional beamline implantation. Currently, no commercial technology computer aided design (TCAD) process simulator allows modeling the complete USJ fabrication process by PIII, including as-implanted dopant profiles, damage formation, dopant diffusion and activation. In this work, a full simulation of a p-type BF{sub 3} PIII USJ has been carried out. In order to investigate the various physical phenomena mentioned above, process conditions included a high energy/high dose case (10 kV, 5 Multiplication-Sign 10{sup 15} cm{sup -2}), specifically designed to increase damage formation, as well as more technology relevant implant conditions (0.5 kV) for comparison. All implanted samples were annealed at different temperatures and times. As implanted profiles for both boron and fluorine in BF{sub 3} implants were modeled and compared to Secondary Ion Mass Spectrometry (SIMS) measurements. Amorphous/crystalline (a/c) interface depths were measured by transmission electron microscopy (TEM) and successfully simulated. Diffused profiles simulations agreed with SIMS data at low thermal budgets. A boron peak behind the a/c interface was observed in all annealed SIMS profiles for the 10 kV case, indicating boron trapping frommore » EOR defects in this region even after high thermal budgets. TEM measurements on the annealed samples showed an end of range (EOR) defects survival behind the a/c interface, including large dislocation loops (DLs) lying on (001) plane parallel to the surface. In the last part of this work, activation simulations were compared to Hall measurements and confirmed the need to develop a (001) large BICs model.« less

Authors:
; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2];  [2];  [3];  [2] more »;  [2];  [2] « less
  1. STMicroelectronics 850 rue Jean Monnet F-38926 Crolles France and LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse (France)
  2. (France)
  3. (Germany)
Publication Date:
OSTI Identifier:
22075706
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; AMORPHOUS STATE; ANNEALING; BORON; BORON FLUORIDES; COMPARATIVE EVALUATIONS; DIFFUSION; DISLOCATIONS; DOPED MATERIALS; HALL EFFECT; INTERFACES; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TRAPPING

Citation Formats

Essa, Z., Cristiano, F., Spiegel, Y., Boulenc, P., Qiu, Y., Quillec, M., Taleb, N., Burenkov, A., Hackenberg, M., Bedel-Pereira, E., Mortet, V., Torregrosa, Frank, Tavernier, C., LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, IBS av. Gaston Imbert prolongee 13790 Peynier Rousset, STMicroelectronics 850 rue Jean Monnet F-38926 Crolles, LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, Probion Analysis 37 rue de Fontenay 92220 Bagneux, Fraunhofer IISB Schottkystrasse 10, 91058 Erlangen, LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, IBS av. Gaston Imbert prolongee 13790 Peynier Rousset, and STMicroelectronics 850 rue Jean Monnet F-38926 Crolles. BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion. United States: N. p., 2012. Web. doi:10.1063/1.4766532.
Essa, Z., Cristiano, F., Spiegel, Y., Boulenc, P., Qiu, Y., Quillec, M., Taleb, N., Burenkov, A., Hackenberg, M., Bedel-Pereira, E., Mortet, V., Torregrosa, Frank, Tavernier, C., LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, IBS av. Gaston Imbert prolongee 13790 Peynier Rousset, STMicroelectronics 850 rue Jean Monnet F-38926 Crolles, LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, Probion Analysis 37 rue de Fontenay 92220 Bagneux, Fraunhofer IISB Schottkystrasse 10, 91058 Erlangen, LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, IBS av. Gaston Imbert prolongee 13790 Peynier Rousset, & STMicroelectronics 850 rue Jean Monnet F-38926 Crolles. BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion. United States. doi:10.1063/1.4766532.
Essa, Z., Cristiano, F., Spiegel, Y., Boulenc, P., Qiu, Y., Quillec, M., Taleb, N., Burenkov, A., Hackenberg, M., Bedel-Pereira, E., Mortet, V., Torregrosa, Frank, Tavernier, C., LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, IBS av. Gaston Imbert prolongee 13790 Peynier Rousset, STMicroelectronics 850 rue Jean Monnet F-38926 Crolles, LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, Probion Analysis 37 rue de Fontenay 92220 Bagneux, Fraunhofer IISB Schottkystrasse 10, 91058 Erlangen, LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse, IBS av. Gaston Imbert prolongee 13790 Peynier Rousset, and STMicroelectronics 850 rue Jean Monnet F-38926 Crolles. Tue . "BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion". United States. doi:10.1063/1.4766532.
@article{osti_22075706,
title = {BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion},
author = {Essa, Z. and Cristiano, F. and Spiegel, Y. and Boulenc, P. and Qiu, Y. and Quillec, M. and Taleb, N. and Burenkov, A. and Hackenberg, M. and Bedel-Pereira, E. and Mortet, V. and Torregrosa, Frank and Tavernier, C. and LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse and IBS av. Gaston Imbert prolongee 13790 Peynier Rousset and STMicroelectronics 850 rue Jean Monnet F-38926 Crolles and LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse and Probion Analysis 37 rue de Fontenay 92220 Bagneux and Fraunhofer IISB Schottkystrasse 10, 91058 Erlangen and LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse and IBS av. Gaston Imbert prolongee 13790 Peynier Rousset and STMicroelectronics 850 rue Jean Monnet F-38926 Crolles},
abstractNote = {In the race for highly doped ultra-shallow junctions (USJs) in complementary metal oxide semi-conductor (CMOS) technologies, plasma immersion ion implantation (PIII) is a promising alternative to traditional beamline implantation. Currently, no commercial technology computer aided design (TCAD) process simulator allows modeling the complete USJ fabrication process by PIII, including as-implanted dopant profiles, damage formation, dopant diffusion and activation. In this work, a full simulation of a p-type BF{sub 3} PIII USJ has been carried out. In order to investigate the various physical phenomena mentioned above, process conditions included a high energy/high dose case (10 kV, 5 Multiplication-Sign 10{sup 15} cm{sup -2}), specifically designed to increase damage formation, as well as more technology relevant implant conditions (0.5 kV) for comparison. All implanted samples were annealed at different temperatures and times. As implanted profiles for both boron and fluorine in BF{sub 3} implants were modeled and compared to Secondary Ion Mass Spectrometry (SIMS) measurements. Amorphous/crystalline (a/c) interface depths were measured by transmission electron microscopy (TEM) and successfully simulated. Diffused profiles simulations agreed with SIMS data at low thermal budgets. A boron peak behind the a/c interface was observed in all annealed SIMS profiles for the 10 kV case, indicating boron trapping from EOR defects in this region even after high thermal budgets. TEM measurements on the annealed samples showed an end of range (EOR) defects survival behind the a/c interface, including large dislocation loops (DLs) lying on (001) plane parallel to the surface. In the last part of this work, activation simulations were compared to Hall measurements and confirmed the need to develop a (001) large BICs model.},
doi = {10.1063/1.4766532},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}