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Title: Simulation of BF{sub 3} plasma immersion ion implantation into silicon

Abstract

Plasma immersion ion implantation from a BF{sub 3} plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulation code. An analytical model of plasma immersion ion implantation that assumes a uniform and isotropic implantation was implemented in a software module called IMP3D. The functionality of this module which was initially envisaged for the three-dimensional simulation of conventional ion implantation was extended to plasma immersion ion implantation and examples of 2D and 3D simulations from this are presented.

Authors:
; ; ; ;  [1];  [2]
  1. Fraunhofer Institute for Integrated Systems and Device Technology Schottkystrasse 10, 91058 Erlangen (Germany)
  2. (France)
Publication Date:
OSTI Identifier:
22075705
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; BORON; BORON FLUORIDES; COMPUTERIZED SIMULATION; ENERGY SPECTRA; I CODES; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTRA; MASS SPECTROSCOPY; MONTE CARLO METHOD; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; THREE-DIMENSIONAL CALCULATIONS

Citation Formats

Burenkov, A., Hahn, A., Spiegel, Y., Etienne, H., Torregrosa, Frank, and Ion Beam Services ZI Peynier Rousset, Rue G. Imbert Prolongee, F-13790 Peynier. Simulation of BF{sub 3} plasma immersion ion implantation into silicon. United States: N. p., 2012. Web. doi:10.1063/1.4766531.
Burenkov, A., Hahn, A., Spiegel, Y., Etienne, H., Torregrosa, Frank, & Ion Beam Services ZI Peynier Rousset, Rue G. Imbert Prolongee, F-13790 Peynier. Simulation of BF{sub 3} plasma immersion ion implantation into silicon. United States. doi:10.1063/1.4766531.
Burenkov, A., Hahn, A., Spiegel, Y., Etienne, H., Torregrosa, Frank, and Ion Beam Services ZI Peynier Rousset, Rue G. Imbert Prolongee, F-13790 Peynier. Tue . "Simulation of BF{sub 3} plasma immersion ion implantation into silicon". United States. doi:10.1063/1.4766531.
@article{osti_22075705,
title = {Simulation of BF{sub 3} plasma immersion ion implantation into silicon},
author = {Burenkov, A. and Hahn, A. and Spiegel, Y. and Etienne, H. and Torregrosa, Frank and Ion Beam Services ZI Peynier Rousset, Rue G. Imbert Prolongee, F-13790 Peynier},
abstractNote = {Plasma immersion ion implantation from a BF{sub 3} plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulation code. An analytical model of plasma immersion ion implantation that assumes a uniform and isotropic implantation was implemented in a software module called IMP3D. The functionality of this module which was initially envisaged for the three-dimensional simulation of conventional ion implantation was extended to plasma immersion ion implantation and examples of 2D and 3D simulations from this are presented.},
doi = {10.1063/1.4766531},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}