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Title: Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes

Abstract

An innovative Kinetic Monte Carlo (KMC) code has been developed, which rules the post-implant kinetics of the defects system in the extremely far-from-the equilibrium conditions caused by the laser irradiation close to the liquid-solid interface. It considers defect diffusion, annihilation and clustering. The code properly implements, consistently to the stochastic formalism, the fast varying local event rates related to the thermal field T(r,t) evolution. This feature of our numerical method represents an important advancement with respect to current state of the art KMC codes. The reduction of the implantation damage and its reorganization in defect aggregates are studied as a function of the process conditions. Phosphorus activation efficiency, experimentally determined in similar conditions, has been related to the emerging damage scenario.

Authors:
; ; ; ; ; ;  [1];  [2];  [3];  [4];  [3]
  1. CNR IMM, Z.I. VIII Strada 5, I -95121 Catania (Italy)
  2. (Spain)
  3. (Italy)
  4. (France)
Publication Date:
OSTI Identifier:
22075703
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; DIFFUSION; EFFICIENCY; INTERFACES; ION IMPLANTATION; IRRADIATION; K CODES; LASER RADIATION; MELTING; MONTE CARLO METHOD; PHOSPHORUS; PHYSICAL RADIATION EFFECTS; SOLIDS; STOCHASTIC PROCESSES

Citation Formats

Fisicaro, G., Pelaz, Lourdes, Lopez, P., Italia, M., Huet, K., Venturini, J., La Magna, A., Department of Electronics, University of Valladolid, 47011 Valladolid, CNR IMM, Z.I. VIII Strada 5, I -95121 Catania, Excico 13-21 Quai des Gresillons, 92230 Gennevilliers, and CNR IMM, Z.I. VIII Strada 5, I -95121 Catania. Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes. United States: N. p., 2012. Web. doi:10.1063/1.4766528.
Fisicaro, G., Pelaz, Lourdes, Lopez, P., Italia, M., Huet, K., Venturini, J., La Magna, A., Department of Electronics, University of Valladolid, 47011 Valladolid, CNR IMM, Z.I. VIII Strada 5, I -95121 Catania, Excico 13-21 Quai des Gresillons, 92230 Gennevilliers, & CNR IMM, Z.I. VIII Strada 5, I -95121 Catania. Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes. United States. doi:10.1063/1.4766528.
Fisicaro, G., Pelaz, Lourdes, Lopez, P., Italia, M., Huet, K., Venturini, J., La Magna, A., Department of Electronics, University of Valladolid, 47011 Valladolid, CNR IMM, Z.I. VIII Strada 5, I -95121 Catania, Excico 13-21 Quai des Gresillons, 92230 Gennevilliers, and CNR IMM, Z.I. VIII Strada 5, I -95121 Catania. Tue . "Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes". United States. doi:10.1063/1.4766528.
@article{osti_22075703,
title = {Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes},
author = {Fisicaro, G. and Pelaz, Lourdes and Lopez, P. and Italia, M. and Huet, K. and Venturini, J. and La Magna, A. and Department of Electronics, University of Valladolid, 47011 Valladolid and CNR IMM, Z.I. VIII Strada 5, I -95121 Catania and Excico 13-21 Quai des Gresillons, 92230 Gennevilliers and CNR IMM, Z.I. VIII Strada 5, I -95121 Catania},
abstractNote = {An innovative Kinetic Monte Carlo (KMC) code has been developed, which rules the post-implant kinetics of the defects system in the extremely far-from-the equilibrium conditions caused by the laser irradiation close to the liquid-solid interface. It considers defect diffusion, annihilation and clustering. The code properly implements, consistently to the stochastic formalism, the fast varying local event rates related to the thermal field T(r,t) evolution. This feature of our numerical method represents an important advancement with respect to current state of the art KMC codes. The reduction of the implantation damage and its reorganization in defect aggregates are studied as a function of the process conditions. Phosphorus activation efficiency, experimentally determined in similar conditions, has been related to the emerging damage scenario.},
doi = {10.1063/1.4766528},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}