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Title: 'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants

Abstract

Angle control has been widely accepted as the key requirement for ion implantation in semiconductor device processing. From an ion implanter point of view, the incident ion direction should be measured and corrected by suitable techniques, such as XP-VPS for the VIISta implanter platform, to ensure precision ion placement in device structures. So called V-curves have been adopted to generate the wafer-based calibration using channeling effects as the Si lattice steer ions into a channeling direction. Thermal Wave (TW) or sheet resistance (Rs) can be used to determine the minimum of the angle response curve. Normally it is expected that the TW and Rs have their respective minima at identical angles. However, the TW and Rs response to the angle variations does depend on factors such as implant species, dose, and wafer temperature. Implant damage accumulation effects have to be considered for data interpretation especially for some 'abnormal' V-curve data. In this paper we will discuss some observed 'abnormal' angle responses, such as a) TW/Rs reverse trend for Arsenic beam, 2) 'W' shape of Rs Boron, and 3) apparent TW/Rs minimum difference for high tilt characterization, along with experimental data and TCAD simulations.

Authors:
; ; ; ; ; ; ;  [1]
  1. Applied Materials - Varian Semiconductor Equipment, 35 Dory Road, Gloucester, MA 01930 (United States)
Publication Date:
OSTI Identifier:
22075700
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; BORON; BUILDUP; CALIBRATION; CHANNELING; COMPUTERIZED SIMULATION; CRYSTAL LATTICES; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; PROCESSING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON

Citation Formats

Guo Baonian, Gossmann, Hans-Joachim, Toh, Terry, Colombeau, Benjamin, Todorov, Stan, Sinclair, Frank, Shim, Kyu-Ha, and Henry, Todd. 'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants. United States: N. p., 2012. Web. doi:10.1063/1.4766504.
Guo Baonian, Gossmann, Hans-Joachim, Toh, Terry, Colombeau, Benjamin, Todorov, Stan, Sinclair, Frank, Shim, Kyu-Ha, & Henry, Todd. 'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants. United States. doi:10.1063/1.4766504.
Guo Baonian, Gossmann, Hans-Joachim, Toh, Terry, Colombeau, Benjamin, Todorov, Stan, Sinclair, Frank, Shim, Kyu-Ha, and Henry, Todd. Tue . "'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants". United States. doi:10.1063/1.4766504.
@article{osti_22075700,
title = {'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants},
author = {Guo Baonian and Gossmann, Hans-Joachim and Toh, Terry and Colombeau, Benjamin and Todorov, Stan and Sinclair, Frank and Shim, Kyu-Ha and Henry, Todd},
abstractNote = {Angle control has been widely accepted as the key requirement for ion implantation in semiconductor device processing. From an ion implanter point of view, the incident ion direction should be measured and corrected by suitable techniques, such as XP-VPS for the VIISta implanter platform, to ensure precision ion placement in device structures. So called V-curves have been adopted to generate the wafer-based calibration using channeling effects as the Si lattice steer ions into a channeling direction. Thermal Wave (TW) or sheet resistance (Rs) can be used to determine the minimum of the angle response curve. Normally it is expected that the TW and Rs have their respective minima at identical angles. However, the TW and Rs response to the angle variations does depend on factors such as implant species, dose, and wafer temperature. Implant damage accumulation effects have to be considered for data interpretation especially for some 'abnormal' V-curve data. In this paper we will discuss some observed 'abnormal' angle responses, such as a) TW/Rs reverse trend for Arsenic beam, 2) 'W' shape of Rs Boron, and 3) apparent TW/Rs minimum difference for high tilt characterization, along with experimental data and TCAD simulations.},
doi = {10.1063/1.4766504},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}