Ring-shaped spatial pattern of exciton luminescence formed due to the hot carrier transport in a locally photoexcited electron-hole bilayer
- National Research Center 'Kurchatov Institute,' (Russian Federation)
A consistent explanation of the formation of a ring-shaped pattern of exciton luminescence in GaAs/AlGaAs double quantum wells is suggested. The pattern consists of two concentric rings around the laser excitation spot. It is shown that the luminescence rings appear due to the in-layer transport of hot charge carriers at high photoexcitation intensity. Interestingly, one of two causes of this transport might involve self-organized criticality (SOC) that would be the first case of the SOC observation in semiconductor physics. We test this cause in a many-body numerical model by performing extensive molecular dynamics simulations. The results show good agreement with experiments. Moreover, the simulations have enabled us to identify the particular kinetic processes underlying the formation of each of these two luminescence rings.
- OSTI ID:
- 22069445
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 114, Issue 6; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
CHARGE CARRIERS
CHARGE TRANSPORT
COMPUTERIZED SIMULATION
EXCITATION
GALLIUM ARSENIDES
HOLES
LASER RADIATION
LAYERS
LUMINESCENCE
MANY-BODY PROBLEM
MOLECULAR DYNAMICS METHOD
QUANTUM WELLS
SEMICONDUCTOR MATERIALS