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Title: Ring-shaped spatial pattern of exciton luminescence formed due to the hot carrier transport in a locally photoexcited electron-hole bilayer

Abstract

A consistent explanation of the formation of a ring-shaped pattern of exciton luminescence in GaAs/AlGaAs double quantum wells is suggested. The pattern consists of two concentric rings around the laser excitation spot. It is shown that the luminescence rings appear due to the in-layer transport of hot charge carriers at high photoexcitation intensity. Interestingly, one of two causes of this transport might involve self-organized criticality (SOC) that would be the first case of the SOC observation in semiconductor physics. We test this cause in a many-body numerical model by performing extensive molecular dynamics simulations. The results show good agreement with experiments. Moreover, the simulations have enabled us to identify the particular kinetic processes underlying the formation of each of these two luminescence rings.

Authors:
 [1]
  1. National Research Center 'Kurchatov Institute,' (Russian Federation)
Publication Date:
OSTI Identifier:
22069445
Resource Type:
Journal Article
Journal Name:
Journal of Experimental and Theoretical Physics
Additional Journal Information:
Journal Volume: 114; Journal Issue: 6; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7761
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; CHARGE CARRIERS; CHARGE TRANSPORT; COMPUTERIZED SIMULATION; EXCITATION; GALLIUM ARSENIDES; HOLES; LASER RADIATION; LAYERS; LUMINESCENCE; MANY-BODY PROBLEM; MOLECULAR DYNAMICS METHOD; QUANTUM WELLS; SEMICONDUCTOR MATERIALS

Citation Formats

Paraskevov, A. V., E-mail: avp.workbox@yandex.ru. Ring-shaped spatial pattern of exciton luminescence formed due to the hot carrier transport in a locally photoexcited electron-hole bilayer. United States: N. p., 2012. Web. doi:10.1134/S1063776112040139.
Paraskevov, A. V., E-mail: avp.workbox@yandex.ru. Ring-shaped spatial pattern of exciton luminescence formed due to the hot carrier transport in a locally photoexcited electron-hole bilayer. United States. doi:10.1134/S1063776112040139.
Paraskevov, A. V., E-mail: avp.workbox@yandex.ru. Fri . "Ring-shaped spatial pattern of exciton luminescence formed due to the hot carrier transport in a locally photoexcited electron-hole bilayer". United States. doi:10.1134/S1063776112040139.
@article{osti_22069445,
title = {Ring-shaped spatial pattern of exciton luminescence formed due to the hot carrier transport in a locally photoexcited electron-hole bilayer},
author = {Paraskevov, A. V., E-mail: avp.workbox@yandex.ru},
abstractNote = {A consistent explanation of the formation of a ring-shaped pattern of exciton luminescence in GaAs/AlGaAs double quantum wells is suggested. The pattern consists of two concentric rings around the laser excitation spot. It is shown that the luminescence rings appear due to the in-layer transport of hot charge carriers at high photoexcitation intensity. Interestingly, one of two causes of this transport might involve self-organized criticality (SOC) that would be the first case of the SOC observation in semiconductor physics. We test this cause in a many-body numerical model by performing extensive molecular dynamics simulations. The results show good agreement with experiments. Moreover, the simulations have enabled us to identify the particular kinetic processes underlying the formation of each of these two luminescence rings.},
doi = {10.1134/S1063776112040139},
journal = {Journal of Experimental and Theoretical Physics},
issn = {1063-7761},
number = 6,
volume = 114,
place = {United States},
year = {2012},
month = {6}
}