Electronic structure and the local electroneutrality level of SiC polytypes from quasiparticle calculations within the GW approximation
- Kemerovo State University (Russian Federation)
The most important interband transitions and the local charge neutrality level (CNL) in silicon carbide polytypes 3C-SiC and nH-SiC (n = 2-8) are calculated using the GW approximation for the self energy of quasiparticles. The calculated values of band gap E{sub g} for various polytypes fall in the range 2.38 eV (3C-SiC)-3.33 eV (2H-SiC) and are very close to the experimental data (2.42-3.33 eV). The quasiparticle corrections to E{sub g} determined by DFT-LDA calculations (about 1.1 eV) are almost independent of the crystal structure of a polytype. The positions of CNL in various polytypes are found to be almost the same, and the change in CNL correlates weakly with the change in E{sub g}, which increases with the hexagonality of SiC. The calculated value of CNL varies from 1.74 eV in polytype 3C-SiC to 1.81 eV in 4H-SiC.
- OSTI ID:
- 22069444
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 114, Issue 6; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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