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Title: Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon

Abstract

The space-time distribution of charge carriers at the place of the location of a muonic atom formed when a negative muon is captured by an atom of the lattice has been numerically simulated taking into account the self-consistent electric field. The results of {mu}SR experiments with negative muons in diamond crystals have been explained and reasons for the difference in the behavior of the spin polarization of the negative muon in boron-doped diamond and in silicon have been revealed. The condition of the validity of the analytical solution of this problem has been obtained. It has been shown that the muonic atom in diamond, in contrast to silicon, does not form a neutral acceptor center in the paramagnetic state during the muon experiment and remains in the diamagnetic state of a positive ion.

Authors:
; ;  [1]
  1. Moscow Institute of Physics and Technology (State University) (Russian Federation)
Publication Date:
OSTI Identifier:
22069264
Resource Type:
Journal Article
Journal Name:
Journal of Experimental and Theoretical Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 5; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7761
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 74 ATOMIC AND MOLECULAR PHYSICS; ANALYTICAL SOLUTION; BORON; CATIONS; CHARGE CARRIERS; CRYSTALS; DIAMAGNETISM; DIAMONDS; DOPED MATERIALS; ELECTRIC FIELDS; MUON SPIN RELAXATION; MUONIC ATOMS; MUONS; PARAMAGNETISM; SILICON; SPACE-TIME; SPIN ORIENTATION

Citation Formats

Antipov, S. A., Belousov, Yu. M., and Solov'ev, V. R., E-mail: vic_sol@mail.ru. Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon. United States: N. p., 2012. Web. doi:10.1134/S1063776112090026.
Antipov, S. A., Belousov, Yu. M., & Solov'ev, V. R., E-mail: vic_sol@mail.ru. Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon. United States. doi:10.1134/S1063776112090026.
Antipov, S. A., Belousov, Yu. M., and Solov'ev, V. R., E-mail: vic_sol@mail.ru. Thu . "Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon". United States. doi:10.1134/S1063776112090026.
@article{osti_22069264,
title = {Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon},
author = {Antipov, S. A. and Belousov, Yu. M. and Solov'ev, V. R., E-mail: vic_sol@mail.ru},
abstractNote = {The space-time distribution of charge carriers at the place of the location of a muonic atom formed when a negative muon is captured by an atom of the lattice has been numerically simulated taking into account the self-consistent electric field. The results of {mu}SR experiments with negative muons in diamond crystals have been explained and reasons for the difference in the behavior of the spin polarization of the negative muon in boron-doped diamond and in silicon have been revealed. The condition of the validity of the analytical solution of this problem has been obtained. It has been shown that the muonic atom in diamond, in contrast to silicon, does not form a neutral acceptor center in the paramagnetic state during the muon experiment and remains in the diamagnetic state of a positive ion.},
doi = {10.1134/S1063776112090026},
journal = {Journal of Experimental and Theoretical Physics},
issn = {1063-7761},
number = 5,
volume = 115,
place = {United States},
year = {2012},
month = {11}
}