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Title: Photoelectric and electric properties of four-component copper chalcogenides

Abstract

The results of investigation of the electrophysical and photoelectric properties of complex copper chalcogenides are presented, namely, the properties of CuSnAsSe{sub 3}, which exhibits ferroelectric properties, and CuInAsS{sub 3}, which exhibits ionic conductivity. The spectral and temperature regions of photosensitivity of these crystals are determined. The depth of the level of carrier trapping centers, which manifest themselves under thermal activation, are evaluated from the analysis of thermally stimulated conductivity (TSC) curves in CuInAsS{sub 3}.

Authors:
;  [1];  [2];  [1]; ; ;  [2]
  1. Russian Academy of Sciences, Amirkhanov Institute of Physics, Dagestan Scientific Center (Russian Federation)
  2. Ural Federal University, Institute of Natural Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22069260
Resource Type:
Journal Article
Journal Name:
Journal of Experimental and Theoretical Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 5; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7761
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CHARGE CARRIERS; COPPER; COPPER COMPOUNDS; CRYSTALS; ENERGY LEVELS; FERROELECTRIC MATERIALS; INDIUM SELENIDES; IONIC CONDUCTIVITY; PHOTOSENSITIVITY; TIN ARSENIDES; TIN SELENIDES; TRAPPING

Citation Formats

Saipulaeva, L. A., E-mail: l.saypulaeva@gmail.com, Gabibov, F. S., Mel'nikova, N. V., E-mail: nvm.melnikova@gmail.com, Alibekov, A. G., Kheifets, O. L., Babushkin, A. N., and Kurochka, K. V. Photoelectric and electric properties of four-component copper chalcogenides. United States: N. p., 2012. Web. doi:10.1134/S1063776112100111.
Saipulaeva, L. A., E-mail: l.saypulaeva@gmail.com, Gabibov, F. S., Mel'nikova, N. V., E-mail: nvm.melnikova@gmail.com, Alibekov, A. G., Kheifets, O. L., Babushkin, A. N., & Kurochka, K. V. Photoelectric and electric properties of four-component copper chalcogenides. United States. doi:10.1134/S1063776112100111.
Saipulaeva, L. A., E-mail: l.saypulaeva@gmail.com, Gabibov, F. S., Mel'nikova, N. V., E-mail: nvm.melnikova@gmail.com, Alibekov, A. G., Kheifets, O. L., Babushkin, A. N., and Kurochka, K. V. Thu . "Photoelectric and electric properties of four-component copper chalcogenides". United States. doi:10.1134/S1063776112100111.
@article{osti_22069260,
title = {Photoelectric and electric properties of four-component copper chalcogenides},
author = {Saipulaeva, L. A., E-mail: l.saypulaeva@gmail.com and Gabibov, F. S. and Mel'nikova, N. V., E-mail: nvm.melnikova@gmail.com and Alibekov, A. G. and Kheifets, O. L. and Babushkin, A. N. and Kurochka, K. V.},
abstractNote = {The results of investigation of the electrophysical and photoelectric properties of complex copper chalcogenides are presented, namely, the properties of CuSnAsSe{sub 3}, which exhibits ferroelectric properties, and CuInAsS{sub 3}, which exhibits ionic conductivity. The spectral and temperature regions of photosensitivity of these crystals are determined. The depth of the level of carrier trapping centers, which manifest themselves under thermal activation, are evaluated from the analysis of thermally stimulated conductivity (TSC) curves in CuInAsS{sub 3}.},
doi = {10.1134/S1063776112100111},
journal = {Journal of Experimental and Theoretical Physics},
issn = {1063-7761},
number = 5,
volume = 115,
place = {United States},
year = {2012},
month = {11}
}