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Title: Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study

Abstract

The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around 20.5 A InAs/24 A GaSb were [J. Applied physics, 96, 2580 (2004)] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. We have used a realistic and reliable 14-band k.p formalism description of the superlattice electronic band structure to calculate the absorption coefficient in such short-period InAs/GaSb type-II superlattices. The parameters for this formalism are known from fitting to independent experiments for the bulk materials. The band-gap energies are obtained without any fitting parameters, and are in good agreement with experimental data.

Authors:
 [1]
  1. Department of Applied Physical Sciences, Jordan University of Science and Technology Irbid, 21141 (Jordan)
Publication Date:
OSTI Identifier:
22069212
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1476; Journal Issue: 1; Conference: 2. international advances in applied physics and materials science congress, Antalya (Turkey), 26-29 Apr 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; INFRARED SPECTRA; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SUPERLATTICES

Citation Formats

AbuEl-Rub, Khaled M. Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study. United States: N. p., 2012. Web. doi:10.1063/1.4751570.
AbuEl-Rub, Khaled M. Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study. United States. doi:10.1063/1.4751570.
AbuEl-Rub, Khaled M. Thu . "Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study". United States. doi:10.1063/1.4751570.
@article{osti_22069212,
title = {Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study},
author = {AbuEl-Rub, Khaled M.},
abstractNote = {The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around 20.5 A InAs/24 A GaSb were [J. Applied physics, 96, 2580 (2004)] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. We have used a realistic and reliable 14-band k.p formalism description of the superlattice electronic band structure to calculate the absorption coefficient in such short-period InAs/GaSb type-II superlattices. The parameters for this formalism are known from fitting to independent experiments for the bulk materials. The band-gap energies are obtained without any fitting parameters, and are in good agreement with experimental data.},
doi = {10.1063/1.4751570},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1476,
place = {United States},
year = {Thu Sep 06 00:00:00 EDT 2012},
month = {Thu Sep 06 00:00:00 EDT 2012}
}