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Title: Room-temperature steady-state optomechanical entanglement on a chip

Abstract

A potential experimental system, based on high-stress stoichiometric silicon nitride (Si{sub 3}N{sub 4}), is proposed to generate steady-state optomechanical entanglement at room temperature. In the proposed structure, a nanostring interacts dispersively and reactively with a microdisk cavity via the evanescent field. We study the role of both dispersive and reactive couplings in generating optomechanical entanglement, and show that the room-temperature entanglement can be effectively obtained through the dispersive couplings under the reasonable experimental parameters. In particular, in the limits of high temperature (T) and high mechanical quality factor (Q{sub m}), we find that the logarithmic entanglement depends only on the ratio T/Q{sub m}. This indicates that improvements of the material quantity and structure design may lead to more efficient generation of stationary high-temperature entanglement.

Authors:
; ; ; ;  [1]
  1. Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026 (China)
Publication Date:
OSTI Identifier:
22068662
Resource Type:
Journal Article
Journal Name:
Physical Review. A
Additional Journal Information:
Journal Volume: 84; Journal Issue: 3; Other Information: (c) 2011 American Institute of Physics; Country of input: Syrian Arab Republic; Journal ID: ISSN 1050-2947
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; OPTICAL SYSTEMS; QUALITY FACTOR; QUANTUM ENTANGLEMENT; SILICON NITRIDES; STEADY-STATE CONDITIONS; STOICHIOMETRY; STRESSES; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Zou Changling, Zou Xubo, Sun Fangwen, Han Zhengfu, and Guo Guangcan. Room-temperature steady-state optomechanical entanglement on a chip. United States: N. p., 2011. Web. doi:10.1103/PHYSREVA.84.032317.
Zou Changling, Zou Xubo, Sun Fangwen, Han Zhengfu, & Guo Guangcan. Room-temperature steady-state optomechanical entanglement on a chip. United States. doi:10.1103/PHYSREVA.84.032317.
Zou Changling, Zou Xubo, Sun Fangwen, Han Zhengfu, and Guo Guangcan. Thu . "Room-temperature steady-state optomechanical entanglement on a chip". United States. doi:10.1103/PHYSREVA.84.032317.
@article{osti_22068662,
title = {Room-temperature steady-state optomechanical entanglement on a chip},
author = {Zou Changling and Zou Xubo and Sun Fangwen and Han Zhengfu and Guo Guangcan},
abstractNote = {A potential experimental system, based on high-stress stoichiometric silicon nitride (Si{sub 3}N{sub 4}), is proposed to generate steady-state optomechanical entanglement at room temperature. In the proposed structure, a nanostring interacts dispersively and reactively with a microdisk cavity via the evanescent field. We study the role of both dispersive and reactive couplings in generating optomechanical entanglement, and show that the room-temperature entanglement can be effectively obtained through the dispersive couplings under the reasonable experimental parameters. In particular, in the limits of high temperature (T) and high mechanical quality factor (Q{sub m}), we find that the logarithmic entanglement depends only on the ratio T/Q{sub m}. This indicates that improvements of the material quantity and structure design may lead to more efficient generation of stationary high-temperature entanglement.},
doi = {10.1103/PHYSREVA.84.032317},
journal = {Physical Review. A},
issn = {1050-2947},
number = 3,
volume = 84,
place = {United States},
year = {2011},
month = {9}
}