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Title: Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

Abstract

The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

Authors:
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Publication Date:
OSTI Identifier:
22066641
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 42; Journal Issue: 10; Other Information: Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EXTREME ULTRAVIOLET RADIATION; FILTERS; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTODIODES; SENSITIVITY; SILICON; SPATIAL RESOLUTION; VISIBLE RADIATION; ZIRCONIUM

Citation Formats

Aruev, P N, Barysheva, Mariya M, Ber, B Ya, Zabrodskaya, N V, Zabrodskii, V V, Lopatin, A Ya, Pestov, Alexey E, Petrenko, M V, Polkovnikov, V N, Salashchenko, Nikolai N, Sukhanov, V L, and Chkhalo, Nikolai I. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range. United States: N. p., 2012. Web. doi:10.1070/QE2012V042N10ABEH014901.
Aruev, P N, Barysheva, Mariya M, Ber, B Ya, Zabrodskaya, N V, Zabrodskii, V V, Lopatin, A Ya, Pestov, Alexey E, Petrenko, M V, Polkovnikov, V N, Salashchenko, Nikolai N, Sukhanov, V L, & Chkhalo, Nikolai I. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range. United States. doi:10.1070/QE2012V042N10ABEH014901.
Aruev, P N, Barysheva, Mariya M, Ber, B Ya, Zabrodskaya, N V, Zabrodskii, V V, Lopatin, A Ya, Pestov, Alexey E, Petrenko, M V, Polkovnikov, V N, Salashchenko, Nikolai N, Sukhanov, V L, and Chkhalo, Nikolai I. Wed . "Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range". United States. doi:10.1070/QE2012V042N10ABEH014901.
@article{osti_22066641,
title = {Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range},
author = {Aruev, P N and Barysheva, Mariya M and Ber, B Ya and Zabrodskaya, N V and Zabrodskii, V V and Lopatin, A Ya and Pestov, Alexey E and Petrenko, M V and Polkovnikov, V N and Salashchenko, Nikolai N and Sukhanov, V L and Chkhalo, Nikolai I},
abstractNote = {The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)},
doi = {10.1070/QE2012V042N10ABEH014901},
journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 10,
volume = 42,
place = {United States},
year = {2012},
month = {10}
}