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Title: Microwave sintering of MoSi{sub 2}-Mo{sub 5}Si{sub 3} to promote a final nanometer-scale microstructure and suppressing of pesting phenomenon

Abstract

This work shows an innovative sintering process for molybdenum disilicide (MoSi{sub 2}) and molybdenum silicide (Mo{sub 5}Si{sub 3}) in order to have a final nanometer-scale microstructure. Sintered MoSi{sub 2}-Mo{sub 5}Si{sub 3} was fabricated by microwave sintering. The final material showed a significant reduction of pesting phenomena for MoSi{sub 2}. The final microstructure is a mix of micrometer-scale MoSi{sub 2} and nanometer-scale Mo{sub 5}Si{sub 3} immersed in an amorphous SiO{sub 2} phase. This material was characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Thermal Gravimetric Analysis (TGA). - Highlights: Black-Right-Pointing-Pointer We sintered the MoSi{sub 2}-Mo{sub 5}Si{sub 3} by microwave and obtained high final density material. Black-Right-Pointing-Pointer We got a final nanostructured material. Black-Right-Pointing-Pointer We inhibited pesting phenomenon for MoSi{sub 2}.

Authors:
; ; ;
Publication Date:
OSTI Identifier:
22066464
Resource Type:
Journal Article
Journal Name:
Materials Characterization
Additional Journal Information:
Journal Volume: 68; Journal Issue: Complete; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1044-5803
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; AMORPHOUS STATE; MICROSTRUCTURE; MICROWAVE RADIATION; MOLYBDENUM; MOLYBDENUM SILICIDES; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; SINTERING; THERMAL GRAVIMETRIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Arreguin-Zavala, J., E-mail: javier.arreguin-zavala@polymtl.ca, Turenne, S., Martel, A., and Benaissa, A. Microwave sintering of MoSi{sub 2}-Mo{sub 5}Si{sub 3} to promote a final nanometer-scale microstructure and suppressing of pesting phenomenon. United States: N. p., 2012. Web. doi:10.1016/J.MATCHAR.2012.03.014.
Arreguin-Zavala, J., E-mail: javier.arreguin-zavala@polymtl.ca, Turenne, S., Martel, A., & Benaissa, A. Microwave sintering of MoSi{sub 2}-Mo{sub 5}Si{sub 3} to promote a final nanometer-scale microstructure and suppressing of pesting phenomenon. United States. doi:10.1016/J.MATCHAR.2012.03.014.
Arreguin-Zavala, J., E-mail: javier.arreguin-zavala@polymtl.ca, Turenne, S., Martel, A., and Benaissa, A. Fri . "Microwave sintering of MoSi{sub 2}-Mo{sub 5}Si{sub 3} to promote a final nanometer-scale microstructure and suppressing of pesting phenomenon". United States. doi:10.1016/J.MATCHAR.2012.03.014.
@article{osti_22066464,
title = {Microwave sintering of MoSi{sub 2}-Mo{sub 5}Si{sub 3} to promote a final nanometer-scale microstructure and suppressing of pesting phenomenon},
author = {Arreguin-Zavala, J., E-mail: javier.arreguin-zavala@polymtl.ca and Turenne, S. and Martel, A. and Benaissa, A.},
abstractNote = {This work shows an innovative sintering process for molybdenum disilicide (MoSi{sub 2}) and molybdenum silicide (Mo{sub 5}Si{sub 3}) in order to have a final nanometer-scale microstructure. Sintered MoSi{sub 2}-Mo{sub 5}Si{sub 3} was fabricated by microwave sintering. The final material showed a significant reduction of pesting phenomena for MoSi{sub 2}. The final microstructure is a mix of micrometer-scale MoSi{sub 2} and nanometer-scale Mo{sub 5}Si{sub 3} immersed in an amorphous SiO{sub 2} phase. This material was characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Thermal Gravimetric Analysis (TGA). - Highlights: Black-Right-Pointing-Pointer We sintered the MoSi{sub 2}-Mo{sub 5}Si{sub 3} by microwave and obtained high final density material. Black-Right-Pointing-Pointer We got a final nanostructured material. Black-Right-Pointing-Pointer We inhibited pesting phenomenon for MoSi{sub 2}.},
doi = {10.1016/J.MATCHAR.2012.03.014},
journal = {Materials Characterization},
issn = {1044-5803},
number = Complete,
volume = 68,
place = {United States},
year = {2012},
month = {6}
}