Atomic layer deposition of GaN at low temperatures

Journal Article · Sun Jan 15 00:00:00 EST 2012 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3664102· OSTI ID:22054135

Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi ^[1]

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1. UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH{sub 3}) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 deg. C for NH{sub 3} doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to {approx}385 deg. C. Deposition rate, which is constant at {approx}0.51 A/cycle within the temperature range of 250 - 350 deg. C, increased slightly as the temperature decreased to 185 deg. C. In the bulk film, concentrations of Ga, N, and O were constant at {approx}36.6, {approx}43.9, and {approx}19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

• OSTI ID: 22054135
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 30, Issue 1; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
AMMONIA
CRYSTAL GROWTH
DOSES
GALLIUM COMPOUNDS
GALLIUM NITRIDES
MICROSTRUCTURE
NITROGEN
OXYGEN
PLASMA
PRECURSOR
SILICON
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY