Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
- Department of Physics, University of Hong Kong, Pokfulam (Hong Kong)
Arsenic doped ZnO and ZnMgO films were deposited on SiO{sub 2} using radio frequency magnetron sputtering and ZnO-Zn{sub 3}As{sub 2} and ZnO-Zn{sub 3}As{sub 2}-MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of {approx}10{sup 17} cm{sup -3} and mobility of {approx}8 cm{sup 2} V{sup -1} s{sup -1} were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As{sub Zn}-2V{sub Zn} shallow acceptor complex and removes the compensating hydrogen center.
- OSTI ID:
- 22054032
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 29, Issue 3; Other Information: (c) 2011 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
ARSENIC
DOPED MATERIALS
HALL EFFECT
HOLE MOBILITY
MAGNESIUM OXIDES
MAGNETRONS
NUCLEAR REACTION ANALYSIS
PHOTOLUMINESCENCE
POSITRONS
P-TYPE CONDUCTORS
RADIOWAVE RADIATION
SILICON OXIDES
SPUTTERING
SUBSTRATES
SURFACE COATING
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES