Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide
- Department of Chemical Engineering and Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, California 94720 and Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, Anhui 230027 (China)
Low-energy Ar{sup +} ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.
- OSTI ID:
- 22053999
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 5; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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