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Title: Radio frequency ion source operated with field effect transistor based radio frequency system

Abstract

Characteristics of radio frequency (RF) plasma production are investigated using a field effect transistor inverter power supply as an RF wave source. With the frequency of around 0.3 MHz, an electron density over 10{sup 18} m{sup -3} is produced in argon plasma. Although lower densities are obtained in hydrogen plasma, it drastically increased up to 5x10{sup 18} m{sup -3} with an axial magnetic field of around 100 G applied in the driver region. Effects of the magnetic field and gas pressure are investigated in the RF produced plasma with the frequency of several hundred kilohertz.

Authors:
; ;  [1]; ;  [2]
  1. Department of Electrical Engineering, Tohoku University, Sendai 980-8759 (Japan)
  2. National Institute for Fusion Science, Toki 509-5292 (Japan)
Publication Date:
OSTI Identifier:
22053863
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 81; Journal Issue: 2; Conference: ICIS 2009: 13. international conference on ion sources, Gatlinburg, TN (United States), 20-25 Sep 2009; Other Information: (c) 2010 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ARGON; ELECTRON DENSITY; FIELD EFFECT TRANSISTORS; HYDROGEN; INVERTERS; ION SOURCES; MAGNETIC FIELDS; MHZ RANGE; PLASMA PRODUCTION; POWER SUPPLIES; RADIOWAVE RADIATION; RF SYSTEMS

Citation Formats

Ando, A, Komuro, A, Matsuno, T, Tsumori, K, and Takeiri, Y. Radio frequency ion source operated with field effect transistor based radio frequency system. United States: N. p., 2010. Web. doi:10.1063/1.3279306.
Ando, A, Komuro, A, Matsuno, T, Tsumori, K, & Takeiri, Y. Radio frequency ion source operated with field effect transistor based radio frequency system. United States. https://doi.org/10.1063/1.3279306
Ando, A, Komuro, A, Matsuno, T, Tsumori, K, and Takeiri, Y. 2010. "Radio frequency ion source operated with field effect transistor based radio frequency system". United States. https://doi.org/10.1063/1.3279306.
@article{osti_22053863,
title = {Radio frequency ion source operated with field effect transistor based radio frequency system},
author = {Ando, A and Komuro, A and Matsuno, T and Tsumori, K and Takeiri, Y},
abstractNote = {Characteristics of radio frequency (RF) plasma production are investigated using a field effect transistor inverter power supply as an RF wave source. With the frequency of around 0.3 MHz, an electron density over 10{sup 18} m{sup -3} is produced in argon plasma. Although lower densities are obtained in hydrogen plasma, it drastically increased up to 5x10{sup 18} m{sup -3} with an axial magnetic field of around 100 G applied in the driver region. Effects of the magnetic field and gas pressure are investigated in the RF produced plasma with the frequency of several hundred kilohertz.},
doi = {10.1063/1.3279306},
url = {https://www.osti.gov/biblio/22053863}, journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 2,
volume = 81,
place = {United States},
year = {Mon Feb 15 00:00:00 EST 2010},
month = {Mon Feb 15 00:00:00 EST 2010}
}