Fabrication of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayered thin film-based integrated cooling devices

Xiao, Z; Hedgemen, K; Harris, M; DiMasi, E

doi:10.1116/1.3292600

Title: Fabrication of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayered thin film-based integrated cooling devices

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Abstract

In this article, the authors report on the development of solid-state integrated cooling devices using Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se thermoelectric thin films fabricated using sputtering deposition. The multilayer thin films have a periodic structure consisting of alternating Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} layers or Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 2}Se layers, where each layer is about 10 nm thick. The deposited Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} multilayer thin film has a p-type conductivity and the deposited Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film has an n-type conductivity. The multilayer structure of films and the interface of layers were analyzed by x-ray diffraction and reflectivity. Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film-based integrated cooling devices were fabricated using standard integrated circuit fabrication process. The temperature difference was measured from the fabricated cooling devices. The devices could be good candidates for the application of high-efficiency solid-state microcooling.

Authors:

Xiao, Z; Hedgemen, K; Harris, M; DiMasi, E ^[1]

Department of Electrical Engineering, Alabama A and M University, Normal, Alabama 35762 (United States)

Publication Date:: Thu Jul 15 00:00:00 EDT 2010

OSTI Identifier:: 22053728

Resource Type:: Journal Article

Journal Name:: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

Additional Journal Information:: Journal Volume: 28; Journal Issue: 4; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ANTIMONY TELLURIDES; BISMUTH SELENIDES; BISMUTH TELLURIDES; DEPOSITION; EFFICIENCY; ELECTRIC CONDUCTIVITY; FABRICATION; INTEGRATED CIRCUITS; LAYERS; REFLECTIVITY; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION

Citation Formats


                    Xiao, Z, Hedgemen, K, Harris, M, DiMasi, E, and National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973. Fabrication of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayered thin film-based integrated cooling devices.  United States: N. p., 2010. 
        Web.  doi:10.1116/1.3292600.

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                    Xiao, Z, Hedgemen, K, Harris, M, DiMasi, E, & National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973. Fabrication of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayered thin film-based integrated cooling devices.  United States.  https://doi.org/10.1116/1.3292600

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                    Xiao, Z, Hedgemen, K, Harris, M, DiMasi, E, and National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973. 2010.  
        "Fabrication of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayered thin film-based integrated cooling devices".  United States.  https://doi.org/10.1116/1.3292600.

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@article{osti_22053728,

  title        = {Fabrication of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayered thin film-based integrated cooling devices},

  author       = {Xiao, Z and Hedgemen, K and Harris, M and DiMasi, E and National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973},

  abstractNote = {In this article, the authors report on the development of solid-state integrated cooling devices using Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se thermoelectric thin films fabricated using sputtering deposition. The multilayer thin films have a periodic structure consisting of alternating Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} layers or Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 2}Se layers, where each layer is about 10 nm thick. The deposited Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} multilayer thin film has a p-type conductivity and the deposited Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film has an n-type conductivity. The multilayer structure of films and the interface of layers were analyzed by x-ray diffraction and reflectivity. Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film-based integrated cooling devices were fabricated using standard integrated circuit fabrication process. The temperature difference was measured from the fabricated cooling devices. The devices could be good candidates for the application of high-efficiency solid-state microcooling.},

  doi          = {10.1116/1.3292600},

  url          = {https://www.osti.gov/biblio/22053728},
  journal      = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},

  issn         = {1553-1813},

  number       = 4,

  volume       = 28,

  place        = {United States},

  year         = {Thu Jul 15 00:00:00 EDT 2010},

  month        = {Thu Jul 15 00:00:00 EDT 2010}

}

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